Phonon and plasmon deformation potentials of GaAs: Far-infrared study under uniaxial stress

Hnermann, M; Richter, W; Saalmller, J; Anastassakis, E

dc.contributor.author	Hnermann, M	en
dc.contributor.author	Richter, W	en
dc.contributor.author	Saalmller, J	en
dc.contributor.author	Anastassakis, E	en
dc.date.accessioned	2014-03-01T01:06:38Z
dc.date.available	2014-03-01T01:06:38Z
dc.date.issued	1986	en
dc.identifier.issn	01631829	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/9530
dc.subject	Far Infrared	en
dc.title	Phonon and plasmon deformation potentials of GaAs: Far-infrared study under uniaxial stress	en
heal.type	journalArticle	en
heal.identifier.primary	10.1103/PhysRevB.34.5381	en
heal.identifier.secondary	http://dx.doi.org/10.1103/PhysRevB.34.5381	en
heal.publicationDate	1986	en
heal.abstract	We report the results of a complete study of the effects of a uniaxial stress on the far-infrared reflectivity spectrum of GaAs. Stresses up to 15 kbar applied along the [111] and [001] directions allowed us to measure splittings of phonon degeneracies and frequency shifts of the long-wavelength TO and LO phonons and of the free-carrier plasma frequency. From these results we were able to calculate the phonon and plasmon deformation potentials. More importantly, numerical values are obtained for the rate of shifts of the electron effective mass. The results are compared with values given in the literature. © 1986 The American Physical Society.	en
heal.journalName	Physical Review B	en
dc.identifier.doi	10.1103/PhysRevB.34.5381	en
dc.identifier.volume	34	en
dc.identifier.issue	8	en
dc.identifier.spage	5381	en
dc.identifier.epage	5389	en