Semiconductor preionized nitrogen laser

Rickwood, KR; Serafetinides, AA

dc.contributor.author	Rickwood, KR	en
dc.contributor.author	Serafetinides, AA	en
dc.date.accessioned	2014-03-01T01:06:39Z
dc.date.available	2014-03-01T01:06:39Z
dc.date.issued	1986	en
dc.identifier.issn	0034-6748	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/9547
dc.subject.classification	Instruments & Instrumentation	en
dc.subject.classification	Physics, Applied	en
dc.title	Semiconductor preionized nitrogen laser	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.1138592	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.1138592	en
heal.language	English	en
heal.publicationDate	1986	en
heal.abstract	The design and performance of semiconductively preionized nitrogen lasers employing optimized capacitor transfer excitation circuitry are described. These lasers of minimum complexity are capable of producing ultraviolet pulses of up to 1 mJ and 150 kW at efficiencies of more than 0.04%.	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Review of Scientific Instruments	en
dc.identifier.doi	10.1063/1.1138592	en
dc.identifier.isi	ISI:A1986E852900014	en
dc.identifier.volume	57	en
dc.identifier.issue	7	en
dc.identifier.spage	1299	en
dc.identifier.epage	1302	en