Semiconductor preionized nitrogen laser

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dc.contributor.author Rickwood, KR en
dc.contributor.author Serafetinides, AA en
dc.date.accessioned 2014-03-01T01:06:39Z
dc.date.available 2014-03-01T01:06:39Z
dc.date.issued 1986 en
dc.identifier.issn 0034-6748 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/9547
dc.subject.classification Instruments & Instrumentation en
dc.subject.classification Physics, Applied en
dc.title Semiconductor preionized nitrogen laser en
heal.type journalArticle en
heal.identifier.primary 10.1063/1.1138592 en
heal.identifier.secondary http://dx.doi.org/10.1063/1.1138592 en
heal.language English en
heal.publicationDate 1986 en
heal.abstract The design and performance of semiconductively preionized nitrogen lasers employing optimized capacitor transfer excitation circuitry are described. These lasers of minimum complexity are capable of producing ultraviolet pulses of up to 1 mJ and 150 kW at efficiencies of more than 0.04%. en
heal.publisher AMER INST PHYSICS en
heal.journalName Review of Scientific Instruments en
dc.identifier.doi 10.1063/1.1138592 en
dc.identifier.isi ISI:A1986E852900014 en
dc.identifier.volume 57 en
dc.identifier.issue 7 en
dc.identifier.spage 1299 en
dc.identifier.epage 1302 en

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