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The temperature dispersion of the quarter-wave voltage of KD 2xH2(1-x)PO4 and a simple compensation circuit

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dc.contributor.author Serafetinides, AA en
dc.contributor.author Kaparakis, PI en
dc.contributor.author Ioannides, EV en
dc.date.accessioned 2014-03-01T01:06:42Z
dc.date.available 2014-03-01T01:06:42Z
dc.date.issued 1986 en
dc.identifier.issn 0022-3735 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/9576
dc.subject.classification Instruments & Instrumentation en
dc.subject.other POTASSIUM COMPOUNDS en
dc.subject.other COMPENSATION CIRCUIT en
dc.subject.other QUARTER-WAVE VOLTAGE en
dc.subject.other TEMPERATURE DISPERSION en
dc.subject.other ELECTROOPTICAL MATERIALS en
dc.title The temperature dispersion of the quarter-wave voltage of KD 2xH2(1-x)PO4 and a simple compensation circuit en
heal.type journalArticle en
heal.identifier.primary 10.1088/0022-3735/19/11/015 en
heal.identifier.secondary http://dx.doi.org/10.1088/0022-3735/19/11/015 en
heal.identifier.secondary 015 en
heal.language English en
heal.publicationDate 1986 en
heal.abstract The temperature dispersion of the quarter-wave voltage has been studied for four crystals of KD2xH2(1-x)PO4 with x=0.500, 0.885, 0.935 and 0.985 respectively, in the -120 to 120 degrees C range, at lambda =0.63 mu m and 1.06 mu m. The linear dependence of the static longitudinal quarter-wave voltage, previously reported at low temperatures, was observed up to the high temperature phase transition, and a fairly parallel shift of the Vlambda4/=f(T) curves, dependent on the degree of deuteration, was confirmed. To avoid this temperature dispersion (and the deuteration dependence) of the quarter-wave voltage being an obstacle to the use of this material in applications where operation in a wide temperature range is required, the authors designed a simple compensation circuit with adjustable slope dV/dT and adjustable voltage limits. en
heal.publisher IOP PUBLISHING LTD en
heal.journalName Journal of Physics E: Scientific Instruments en
dc.identifier.doi 10.1088/0022-3735/19/11/015 en
dc.identifier.isi ISI:A1986F174200018 en
dc.identifier.volume 19 en
dc.identifier.issue 11 en
dc.identifier.spage 949 en
dc.identifier.epage 953 en


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