Energy spectrum in the inversion layer of a disordered oxide-semiconductor interface

Papatriantafillou, C; Papakitsos, A; Paraskevaidis, C

dc.contributor.author	Papatriantafillou, C	en
dc.contributor.author	Papakitsos, A	en
dc.contributor.author	Paraskevaidis, C	en
dc.date.accessioned	2014-03-01T01:06:52Z
dc.date.available	2014-03-01T01:06:52Z
dc.date.issued	1987	en
dc.identifier.issn	0039-6028	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/9643
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-45949121046&partnerID=40&md5=22d0d2ecffb841eee371e26be48222db	en
dc.subject.classification	Chemistry, Physical	en
dc.subject.classification	Physics, Condensed Matter	en
dc.title	Energy spectrum in the inversion layer of a disordered oxide-semiconductor interface	en
heal.type	journalArticle	en
heal.language	English	en
heal.publicationDate	1987	en
heal.abstract	The electronic density of states in the inversion layer of a disordered oxide-semiconductor interface is studied in the case of high bias voltage. A Bethe lattice construction is used imitating locally the first few layers of a four-fold coordinated structure. A disordered tight-binding Hamiltonian is used for an electronic system placed in a potential well varying perpendicularly to the surface. The case of diagonal Lorentzian and Gaussian disorder is studied. In the limit of very weak disorder the density of states of the system shows marked structure. © 1987.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Surface Science	en
dc.identifier.isi	ISI:A1987F803200022	en
dc.identifier.volume	179	en
dc.identifier.issue	2-3	en
dc.identifier.spage	527	en
dc.identifier.epage	539	en