dc.contributor.author |
Pissis, P |
en |
dc.contributor.author |
Apekis, L |
en |
dc.contributor.author |
Christodoulides, C |
en |
dc.date.accessioned |
2014-03-01T01:06:55Z |
|
dc.date.available |
2014-03-01T01:06:55Z |
|
dc.date.issued |
1987 |
en |
dc.identifier.issn |
0392-6737 |
en |
dc.identifier.uri |
https://dspace.lib.ntua.gr/xmlui/handle/123456789/9672 |
|
dc.subject |
Polarization and depolarization effects |
en |
dc.subject.classification |
Physics, Multidisciplinary |
en |
dc.title |
Multiplicity of dielectric relaxation times of dispersed ice microcrystals |
en |
heal.type |
journalArticle |
en |
heal.identifier.primary |
10.1007/BF02451177 |
en |
heal.identifier.secondary |
http://dx.doi.org/10.1007/BF02451177 |
en |
heal.language |
English |
en |
heal.publicationDate |
1987 |
en |
heal.abstract |
The multiplicity of relaxation times of the dielectric relaxation of water molecules in dispersed ice microcrystals has been studied by means of the thermally stimulated depolarization (TSD) current method. Using several experimental techniques offered by the TSD method we have shown that the relaxation mechanism is characterized by a continuous distribution of relaxation times with both the activation energy. W and the pre-exponential factor τ0 in the Arrhenius equation being distributed parameters. A linear relationship has been found to exist between W and ln τ0. The dielectric behaviour of ice emulsions has been found to resemble strongly in some aspects that of HF-doped ice and ice samples with high concentrations of crystal imperfections. The multiplicity of relaxation times has been explained by the interaction of intrinsic ionic defects with water molecules. © 1987 Società Italiana di Fisica. |
en |
heal.publisher |
Kluwer Academic Publishers |
en |
heal.journalName |
Il Nuovo Cimento D |
en |
dc.identifier.doi |
10.1007/BF02451177 |
en |
dc.identifier.isi |
ISI:A1987H462300009 |
en |
dc.identifier.volume |
9 |
en |
dc.identifier.issue |
2 |
en |
dc.identifier.spage |
195 |
en |
dc.identifier.epage |
211 |
en |