The effect of target erosion and RF substrate biasing on the properties of reactively sputtered ITO films

Avaritsiotis, JN; Sivridis, DK; Roditi, E

dc.contributor.author	Avaritsiotis, JN	en
dc.contributor.author	Sivridis, DK	en
dc.contributor.author	Roditi, E	en
dc.date.accessioned	2014-03-01T01:07:00Z
dc.date.available	2014-03-01T01:07:00Z
dc.date.issued	1987	en
dc.identifier.issn	0165-1633	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/9732
dc.subject	Reactive Sputtering	en
dc.subject.classification	Energy & Fuels	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.other	SEMICONDUCTING FILMS - Preparation	en
dc.subject.other	SEMICONDUCTOR MATERIALS - Magnetic Field Effects	en
dc.subject.other	INDIUM TIN OXIDE (ITO)	en
dc.subject.other	MAGNETRON SPUTTERING	en
dc.subject.other	REACTIVELY SPUTTERED ITO FILMS	en
dc.subject.other	TARGET EROSION	en
dc.subject.other	SEMICONDUCTING INDIUM COMPOUNDS	en
dc.title	The effect of target erosion and RF substrate biasing on the properties of reactively sputtered ITO films	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/0165-1633(87)90097-9	en
heal.identifier.secondary	http://dx.doi.org/10.1016/0165-1633(87)90097-9	en
heal.language	English	en
heal.publicationDate	1987	en
heal.abstract	ITO films with excellent electrical and optical properties may be produced at relatively high rates by dc magnetron sputtering with and without ion-plating techniques, when the deposition parameters have been properly adjusted. It is reported here, however, that the degree of target erosion affects dramatically the quality of the deposited ITO films. According to the experimental results presented and a simple qualitative model, the observed effect may be attributed to the changing magnetic field strength at the active are of the magnetron head. Pratical ways of overcoming this problem of reproducibility in the properties of ITO films are also discussed. © 1987.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Solar Energy Materials	en
dc.identifier.doi	10.1016/0165-1633(87)90097-9	en
dc.identifier.isi	ISI:A1987J793400008	en
dc.identifier.volume	15	en
dc.identifier.issue	6	en
dc.identifier.spage	485	en
dc.identifier.epage	493	en