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Raman and infrared phonon piezospectroscopy in InP

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dc.contributor.author Anastassakis, E en
dc.contributor.author Raptis, YS en
dc.contributor.author Hnermann, M en
dc.contributor.author Richter, W en
dc.contributor.author Cardona, M en
dc.date.accessioned 2014-03-01T01:07:14Z
dc.date.available 2014-03-01T01:07:14Z
dc.date.issued 1988 en
dc.identifier.issn 0163-1829 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/9877
dc.subject Infrared en
dc.subject.classification Physics, Condensed Matter en
dc.title Raman and infrared phonon piezospectroscopy in InP en
heal.type journalArticle en
heal.identifier.primary 10.1103/PhysRevB.38.7702 en
heal.identifier.secondary http://dx.doi.org/10.1103/PhysRevB.38.7702 en
heal.language English en
heal.publicationDate 1988 en
heal.abstract We have studied the effect of a uniaxial stress on the long-wavelength optical phonons of InP using Raman and far-infrared spectroscopic techniques. The Raman measurements were performed with laser lines in regions of both transparency and opacity, using infrared and visible lasers, respectively. Phonon and effective-charge deformation potentials have been obtained from the data, and also an estimate of the Faust-Henry coefficient from the integrated scattering intensities. Comparison of the Raman and infrared reflectivity results allows us to conclude that the applied stress is relaxed toward the surface of the sample. © 1988 The American Physical Society. en
heal.publisher AMERICAN PHYSICAL SOC en
heal.journalName Physical Review B en
dc.identifier.doi 10.1103/PhysRevB.38.7702 en
dc.identifier.isi ISI:A1988Q531000052 en
dc.identifier.volume 38 en
dc.identifier.issue 11 en
dc.identifier.spage 7702 en
dc.identifier.epage 7709 en


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