Raman investigation of reversible photoinduced effects in semiconducting Ge-S-Ga thin-film glasses

Raptis, C; Ivanova, ZG

dc.contributor.author	Raptis, C	en
dc.contributor.author	Ivanova, ZG	en
dc.date.accessioned	2014-03-01T01:07:14Z
dc.date.available	2014-03-01T01:07:14Z
dc.date.issued	1988	en
dc.identifier.issn	0021-8979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/9878
dc.subject.classification	Physics, Applied	en
dc.title	Raman investigation of reversible photoinduced effects in semiconducting Ge-S-Ga thin-film glasses	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.341652	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.341652	en
heal.language	English	en
heal.publicationDate	1988	en
heal.abstract	Changes in the optical transparency and local structure, induced by exposure to band-gap light and/or annealing at temperatures below the glass-transition temperature Tg, have been observed in amorphous Ge-S-Ga thin films by measuring their transmission and Raman spectra. Either of the treatments leads to a bleaching effect accompanied by an increase of ordering in the local structure. In the combined treatment, photoexposure of previously annealed films results in (i) a further increase of ordering for annealing temperatures Tan up to a critical temperature Tc about 100°C below Tg and (ii) a photodarkening effect and decrease of ordering for Tan >Tc. These results raise the possibility of using such films as base materials for the production of both negative and positive photoresists.	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Journal of Applied Physics	en
dc.identifier.doi	10.1063/1.341652	en
dc.identifier.isi	ISI:A1988P862000057	en
dc.identifier.volume	64	en
dc.identifier.issue	5	en
dc.identifier.spage	2617	en
dc.identifier.epage	2620	en