A Raman study of Zn1-xMnxS mixed crystals

Anastassiadou, A; Liarokapis, E; Anastassakis, E

dc.contributor.author	Anastassiadou, A	en
dc.contributor.author	Liarokapis, E	en
dc.contributor.author	Anastassakis, E	en
dc.date.accessioned	2014-03-01T01:07:22Z
dc.date.available	2014-03-01T01:07:22Z
dc.date.issued	1989	en
dc.identifier.issn	0038-1098	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/9949
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Crystals--Physical Properties	en
dc.subject.other	Raman Scattering	en
dc.subject.other	Dilute Magnetic Semiconductors	en
dc.subject.other	Gruneisen Parameters	en
dc.subject.other	II-VI Semiconductors	en
dc.subject.other	Mixed Crystals	en
dc.subject.other	Magnetic Semiconductors	en
dc.title	A Raman study of Zn1-xMnxS mixed crystals	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/0038-1098(89)90378-5	en
heal.identifier.secondary	http://dx.doi.org/10.1016/0038-1098(89)90378-5	en
heal.language	English	en
heal.publicationDate	1989	en
heal.abstract	A Raman study of the dilute magnetic semiconductors Zn1-xMnxS has been undertaken in the concentration range x=0.03-0.50. The observed x-dependence of the first-order spectrum follows 'one-mode' behavior and can be described by a random-element isodisplacement model. High pressure measurements reveal a linear increase of the phonon frequencies with pressure. The Gruneisen parameters are obtained for all modes observed. Resonant enhancement of the Raman intensities is observed for the 'impurity-induced' modes and is associated with the phonon-assisted radiative emission between Mn2+ electronic levels. © 1989.	en
heal.publisher	PERGAMON-ELSEVIER SCIENCE LTD	en
heal.journalName	Solid State Communications	en
dc.identifier.doi	10.1016/0038-1098(89)90378-5	en
dc.identifier.isi	ISI:A1989R401900005	en
dc.identifier.volume	69	en
dc.identifier.issue	2	en
dc.identifier.spage	137	en
dc.identifier.epage	142	en