Effects of chemical and structural disorder in III-V semiconductors and their alloys

Xanthakis, JP

dc.contributor.author	Xanthakis, JP	en
dc.date.accessioned	2014-03-01T01:07:25Z
dc.date.available	2014-03-01T01:07:25Z
dc.date.issued	1989	en
dc.identifier.issn	0953-8984	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/9994
dc.subject.classification	Physics, Condensed Matter	en
dc.title	Effects of chemical and structural disorder in III-V semiconductors and their alloys	en
heal.type	journalArticle	en
heal.identifier.primary	10.1088/0953-8984/1/29/008	en
heal.identifier.secondary	http://dx.doi.org/10.1088/0953-8984/1/29/008	en
heal.identifier.secondary	008	en
heal.language	English	en
heal.publicationDate	1989	en
heal.abstract	The cluster-Bethe-lattice (CBL) method is used to explore the effects of structural disorder in the electronic structure of a-GaAs, a-GaP and the alloy GaAs1-xPx for which recent EXAFS experiments show bond length disorder. The one-atom CBL approximation gives very accurate band gaps for the compounds and densities of states which agree well-except for the lower valence band (VB)-with the DOS of the crystalline compounds. The calculation for the alloy gives accurate bands but not band gaps. The five-atom CBL approximation retains the values of the band gaps for the compounds and produces DOS that show the features of the spectra of a-GaAs. For the alloy, a reasonable band-gap bowing is obtained while a substantial smoothing of both VB appears, which may compete with the effects of pure chemical disorder. The reasons for the difference between the results obtained using the two approximations are discussed.	en
heal.publisher	IOP PUBLISHING LTD	en
heal.journalName	Journal of Physics: Condensed Matter	en
dc.identifier.doi	10.1088/0953-8984/1/29/008	en
dc.identifier.isi	ISI:A1989AH78200008	en
dc.identifier.volume	1	en
dc.identifier.issue	29	en
dc.identifier.spage	4817	en
dc.identifier.epage	4824	en