Structure and non-uniform strain analysis on p-type porous silicon by X-ray reflectometry and X-ray diffraction

Lopez-Villegas, JM; Navarro, M; Papadimitriou, D; Bassas, J; Samitier, J

dc.contributor.author	Lopez-Villegas, JM	en
dc.contributor.author	Navarro, M	en
dc.contributor.author	Papadimitriou, D	en
dc.contributor.author	Bassas, J	en
dc.contributor.author	Samitier, J	en
dc.date.accessioned	2014-03-01T01:12:19Z
dc.date.available	2014-03-01T01:12:19Z
dc.date.issued	1996	en
dc.identifier.issn	0040-6090	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/12062
dc.subject	Porous silicon	en
dc.subject	Stress	en
dc.subject	Structural properties	en
dc.subject	X-ray diffraction	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Materials Science, Coatings & Films	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	LAYERS	en
dc.title	Structure and non-uniform strain analysis on p-type porous silicon by X-ray reflectometry and X-ray diffraction	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/0040-6090(95)08130-5	en
heal.identifier.secondary	http://dx.doi.org/10.1016/0040-6090(95)08130-5	en
heal.language	English	en
heal.publicationDate	1996	en
heal.abstract	Structural properties of porous silicon layers performed on p-type (100) silicon wafers have been studied by X-ray reflectometry and X-ray diffraction techniques. The mean surface porosity of the layers has been obtained by comparing the critical reflection angles of the porous layer and the silicon substrate. The obtained values are in agreement with microgravimetry measurements. The strain of the porous layer as a function of the technological parameters has been analyzed by X-ray diffraction. The origin of the strain in the porous silicon is discussed according to the presence of stress and changes in the porosity across the layer. Finally, a minimum strain condition has been found, allowing the optimization of the fabrication process.	en
heal.publisher	ELSEVIER SCIENCE SA LAUSANNE	en
heal.journalName	Thin Solid Films	en
dc.identifier.doi	10.1016/0040-6090(95)08130-5	en
dc.identifier.isi	ISI:A1996UU26800060	en
dc.identifier.volume	276	en
dc.identifier.issue	1-2	en
dc.identifier.spage	238	en
dc.identifier.epage	240	en