Depth dependence of stress and porosity in porous silicon: A micro-Raman study

Papadimitriou, D; Bitsakis, J; Lopez-Villegas, JM; Samitier, J; Morante, JR

dc.contributor.author	Papadimitriou, D	en
dc.contributor.author	Bitsakis, J	en
dc.contributor.author	Lopez-Villegas, JM	en
dc.contributor.author	Samitier, J	en
dc.contributor.author	Morante, JR	en
dc.date.accessioned	2014-03-01T01:14:29Z
dc.date.available	2014-03-01T01:14:29Z
dc.date.issued	1999	en
dc.identifier.issn	0040-6090	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/13104
dc.subject	porous-silicon	en
dc.subject	depth profiling	en
dc.subject	Raman scattering	en
dc.subject	stress	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Materials Science, Coatings & Films	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Crystal lattices	en
dc.subject.other	Microsensors	en
dc.subject.other	Porosity	en
dc.subject.other	Raman scattering	en
dc.subject.other	Raman spectroscopy	en
dc.subject.other	Substrates	en
dc.subject.other	Stress depth dependence	en
dc.subject.other	Porous silicon	en
dc.title	Depth dependence of stress and porosity in porous silicon: A micro-Raman study	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0040-6090(99)00213-8	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0040-6090(99)00213-8	en
heal.language	English	en
heal.publicationDate	1999	en
heal.abstract	The elastic strain of porous silicon membranes for potential use in the microsensor technology has been investigated by means of micro-Raman spectroscopy. A depth distribution of the stress normal-to-the plane of formation has been measured with maximal stress value at the interface between the porous layer and the crystalline Si-substrate. The spectral characteristics of the first order Raman scattering (line shape, bandwidth and peak position) were analyzed according to the spatial correlation model in order to estimate the effects of phonon confinement and evaluate the stress. A compressive stress, attributed to the lattice mismatch between porous silicon and c-Si, has been found and shown to relax faster in samples of higher porosity. (C) 1999 Published by Elsevier Science S.A. All rights reserved.	en
heal.publisher	Elsevier Sequoia SA, Lausanne, Switzerland	en
heal.journalName	Thin Solid Films	en
dc.identifier.doi	10.1016/S0040-6090(99)00213-8	en
dc.identifier.isi	ISI:000081020000050	en
dc.identifier.volume	349	en
dc.identifier.issue	1	en
dc.identifier.spage	293	en
dc.identifier.epage	297	en