Parameters influencing the flatness and stability of capacitive pressure sensors fabricated with wafer bonding

Goustouridis, D; Tsoukalas, D; Normand, P; Kontos, AG; Raptis, Y; Anastassakis, E

dc.contributor.author	Goustouridis, D	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Normand, P	en
dc.contributor.author	Kontos, AG	en
dc.contributor.author	Raptis, Y	en
dc.contributor.author	Anastassakis, E	en
dc.date.accessioned	2014-03-01T01:15:02Z
dc.date.available	2014-03-01T01:15:02Z
dc.date.issued	1999	en
dc.identifier.issn	0924-4247	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/13297
dc.subject	silicon	en
dc.subject	capacitive	en
dc.subject	pressure	en
dc.subject	wafer bonding	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Instruments & Instrumentation	en
dc.subject.other	Annealing	en
dc.subject.other	Chemical bonds	en
dc.subject.other	Diaphragms	en
dc.subject.other	Fatigue testing	en
dc.subject.other	Raman spectroscopy	en
dc.subject.other	Semiconductor device manufacture	en
dc.subject.other	Silicon wafers	en
dc.subject.other	Capacitive pressure sensors	en
dc.subject.other	Micro Raman technique	en
dc.subject.other	Wafer bonding	en
dc.subject.other	Partial pressure sensors	en
dc.title	Parameters influencing the flatness and stability of capacitive pressure sensors fabricated with wafer bonding	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0924-4247(99)00040-0	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0924-4247(99)00040-0	en
heal.language	English	en
heal.publicationDate	1999	en
heal.abstract	In this work we present detailed optical and electrical characterization results on silicon capacitive pressure sensing elements. The device fabrication technology is based on the wafer bonding technique. Using the micro-Raman technique, we investigate the influence of specific process steps as well as of the wafer bonding conditions-performed either in air or in nitrogen ambient-on the flatness and stress distribution of the pressure sensing diaphragms. Emphasis is also given on drift as well as on fatigue measurements since these effects determine the reliability of the devices. (C) 1999 Elsevier Science S.A. All rights reserved.	en
heal.publisher	Elsevier Sequoia SA, Lausanne, Switzerland	en
heal.journalName	Sensors and Actuators, A: Physical	en
dc.identifier.doi	10.1016/S0924-4247(99)00040-0	en
dc.identifier.isi	ISI:000083925200065	en
dc.identifier.volume	76	en
dc.identifier.issue	1-3	en
dc.identifier.spage	403	en
dc.identifier.epage	408	en