SiO2 and Si etching in fluorocarbon plasmas: A detailed surface model coupled with a complete plasma and profile simulator

Gogolides, E; Vauvert, P; Courtin, Y; Kokkoris, G; Pelle, R; Boudouvis, A; Turban, G

dc.contributor.author	Gogolides, E	en
dc.contributor.author	Vauvert, P	en
dc.contributor.author	Courtin, Y	en
dc.contributor.author	Kokkoris, G	en
dc.contributor.author	Pelle, R	en
dc.contributor.author	Boudouvis, A	en
dc.contributor.author	Turban, G	en
dc.date.accessioned	2014-03-01T01:15:12Z
dc.date.available	2014-03-01T01:15:12Z
dc.date.issued	1999	en
dc.identifier.issn	01679317	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/13375
dc.subject	Surface Model	en
dc.subject.other	Etching	en
dc.subject.other	Plasma simulation	en
dc.subject.other	Semiconducting silicon	en
dc.subject.other	Semiconductor device models	en
dc.subject.other	Silica	en
dc.subject.other	Fluorocarbon plasmas	en
dc.subject.other	Microelectronic processing	en
dc.title	SiO2 and Si etching in fluorocarbon plasmas: A detailed surface model coupled with a complete plasma and profile simulator	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0167-9317(99)00091-X	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0167-9317(99)00091-X	en
heal.publicationDate	1999	en
heal.abstract	A surface model for SiO2 and Si etching in fluorocarbon plasmas is presented, taking into account polymer deposition. The polymer, the CFx, and the F surface coverage is calculated, as well as the etching yields and rates. Transition from deposition to etching when ion energy or F atom flux increases is observed, and compares well with experimental data. The surface model is coupled to a complete plasma simulator, which also includes the plasma physics, plasma chemistry and profile evolution. The simulator is also briefly described.	en
heal.publisher	Elsevier Science Publishers B.V., Amsterdam, Netherlands	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/S0167-9317(99)00091-X	en
dc.identifier.volume	46	en
dc.identifier.issue	1	en
dc.identifier.spage	311	en
dc.identifier.epage	314	en