SiO2 and Si etching in fluorocarbon plasmas: Coupling of a surface model with a profile evolution simulator.

Kokkoris, G; Gogolides, E; Boudouvis, AG

dc.contributor.author	Kokkoris, G	en
dc.contributor.author	Gogolides, E	en
dc.contributor.author	Boudouvis, AG	en
dc.date.accessioned	2014-03-01T01:15:53Z
dc.date.available	2014-03-01T01:15:53Z
dc.date.issued	2000	en
dc.identifier.issn	0167-9317	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/13793
dc.subject	Plasma Physics	en
dc.subject	Surface Chemistry	en
dc.subject	Surface Model	en
dc.subject	Aspect Ratio	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Nanoscience & Nanotechnology	en
dc.subject.classification	Optics	en
dc.subject.classification	Physics, Applied	en
dc.title	SiO2 and Si etching in fluorocarbon plasmas: Coupling of a surface model with a profile evolution simulator.	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0167-9317(00)00341-5	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0167-9317(00)00341-5	en
heal.language	English	en
heal.publicationDate	2000	en
heal.abstract	A surface model for Si and SiO2 etching in fluorocarbon plasmas has been developed as a part of a complete plasma simulator including plasma physics, plasma chemistry, surface chemistry and a topography profile evolution simulator. It can predict the transition from etching to deposition region, which depends on F and CFx radical concentration, ion flux to the surface and ion energy. The coupling of the surface model with the profile simulator can predict the RIE lag during etching of features with different aspect ratios.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	MICROELECTRONIC ENGINEERING	en
dc.identifier.doi	10.1016/S0167-9317(00)00341-5	en
dc.identifier.isi	ISI:000088603300084	en
dc.identifier.volume	53	en
dc.identifier.issue	1-4	en
dc.identifier.spage	395	en
dc.identifier.epage	398	en