Characterization and simulation of surface and line-edge roughness in photoresists

Constantoudis, V; Gogolides, E; Patsis, GP; Tserepi, A; Valamontes, ES

dc.contributor.author	Constantoudis, V	en
dc.contributor.author	Gogolides, E	en
dc.contributor.author	Patsis, GP	en
dc.contributor.author	Tserepi, A	en
dc.contributor.author	Valamontes, ES	en
dc.date.accessioned	2014-03-01T01:16:13Z
dc.date.available	2014-03-01T01:16:13Z
dc.date.issued	2001	en
dc.identifier.issn	1071-1023	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/13983
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Nanoscience & Nanotechnology	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Algorithms	en
dc.subject.other	Computer simulation	en
dc.subject.other	Fourier transforms	en
dc.subject.other	Fractals	en
dc.subject.other	Lithography	en
dc.subject.other	Scanning electron microscopy	en
dc.subject.other	Surface roughness	en
dc.subject.other	Ultraviolet radiation	en
dc.subject.other	Fractal dimension	en
dc.subject.other	Line-edge roughness	en
dc.subject.other	Molecular type simulator	en
dc.subject.other	Negative tone epoxy resists	en
dc.subject.other	Photoacid generator concentration	en
dc.subject.other	Root mean square deviation	en
dc.subject.other	Photoresists	en
dc.title	Characterization and simulation of surface and line-edge roughness in photoresists	en
heal.type	journalArticle	en
heal.identifier.primary	10.1116/1.1420582	en
heal.identifier.secondary	http://dx.doi.org/10.1116/1.1420582	en
heal.language	English	en
heal.publicationDate	2001	en
heal.abstract	The problem of surface and line-edge roughness characterization and prediction is discussed. Different roughness parameters, such as the root mean square deviation (rms or sigma), the fractal dimension, and the Fourier spectrum, are presented and compared. These roughness parameters for three negative tone resists (wet and plasma developed) are analyzed versus exposure dose, photoacid generator concentration, and plasma development conditions. Finally, a molecular type simulator is used to predict the experimental roughness behavior. (C) 2001 American Vacuum Society.	en
heal.publisher	A V S AMER INST PHYSICS	en
heal.journalName	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures	en
dc.identifier.doi	10.1116/1.1420582	en
dc.identifier.isi	ISI:000173159900122	en
dc.identifier.volume	19	en
dc.identifier.issue	6	en
dc.identifier.spage	2694	en
dc.identifier.epage	2698	en