Influence of Ge implantation on the mechanical properties of polycrystalline silicon microstructures

Polymenakos, S; Stergiou, VC; Kontos, AG; Tsamis, C; Raptis, YS; Tsoukalas, D

dc.contributor.author	Polymenakos, S	en
dc.contributor.author	Stergiou, VC	en
dc.contributor.author	Kontos, AG	en
dc.contributor.author	Tsamis, C	en
dc.contributor.author	Raptis, YS	en
dc.contributor.author	Tsoukalas, D	en
dc.date.accessioned	2014-03-01T01:17:59Z
dc.date.available	2014-03-01T01:17:59Z
dc.date.issued	2002	en
dc.identifier.issn	0960-1317	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/14739
dc.subject	Mechanical Property	en
dc.subject	Microstructures	en
dc.subject	Polycrystalline Silicon	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Nanoscience & Nanotechnology	en
dc.subject.classification	Instruments & Instrumentation	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Mechanics	en
dc.subject.other	Boron	en
dc.subject.other	Computer simulation	en
dc.subject.other	Doping (additives)	en
dc.subject.other	Germanium	en
dc.subject.other	Growth (materials)	en
dc.subject.other	Mechanical properties	en
dc.subject.other	Metallographic microstructure	en
dc.subject.other	Micromachining	en
dc.subject.other	Stresses	en
dc.subject.other	Built-in stress	en
dc.subject.other	Counterbalancing effect	en
dc.subject.other	Pull-in voltage	en
dc.subject.other	Polysilicon	en
dc.title	Influence of Ge implantation on the mechanical properties of polycrystalline silicon microstructures	en
heal.type	journalArticle	en
heal.identifier.primary	10.1088/0960-1317/12/4/318	en
heal.identifier.secondary	http://dx.doi.org/10.1088/0960-1317/12/4/318	en
heal.language	English	en
heal.publicationDate	2002	en
heal.abstract	Polycrystalline silicon (poly-Si) based microstructures, with boron doping (B-doping), are studied, with reference to their built-in stress. for different germanium implantation (Ge-implantation) doses. The microstructures are studied free standing and under static and dynamic deformations. by a combination of macroscopic (pull-in voltage, resonance frequency) and microscopic (micro-Raman) experimental techniques, in comparison with numerical calculation methods. The counterbalancing effect of Ge-implantation versus the B-doping, with respect to the built-in stress, is examined in poly-Si. Measurements, with three different experimental methods, and calculations, on bridges designed and fabricated for micromachining applications, show, consistently, the same maximization trend for the built-in stress, with a maximum at a Ge-dose of 10(15) ions/cm(2). in agreement with a similar non-monotonic Ge-dependence of the growth rate and the crystalline quality of poly-Si, from the literature.	en
heal.publisher	IOP PUBLISHING LTD	en
heal.journalName	Journal of Micromechanics and Microengineering	en
dc.identifier.doi	10.1088/0960-1317/12/4/318	en
dc.identifier.isi	ISI:000177085200019	en
dc.identifier.volume	12	en
dc.identifier.issue	4	en
dc.identifier.spage	450	en
dc.identifier.epage	457	en