Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model

Lallement, C; Sallese, J-M; Bucher, M; Grabinski, W; Fazan, PC

dc.contributor.author	Lallement, C	en
dc.contributor.author	Sallese, J-M	en
dc.contributor.author	Bucher, M	en
dc.contributor.author	Grabinski, W	en
dc.contributor.author	Fazan, PC	en
dc.date.accessioned	2014-03-01T01:18:35Z
dc.date.available	2014-03-01T01:18:35Z
dc.date.issued	2003	en
dc.identifier.issn	0018-9383	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/15100
dc.subject	Charges modeling	en
dc.subject	Compact modeling	en
dc.subject	EKV MOSFET model	en
dc.subject	Polydepletion effect	en
dc.subject	Quantum effect	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Computer simulation	en
dc.subject.other	Current voltage characteristics	en
dc.subject.other	Doping (additives)	en
dc.subject.other	Polysilicon	en
dc.subject.other	Printed circuit design	en
dc.subject.other	Quantum theory	en
dc.subject.other	Polysilicon depletion	en
dc.subject.other	Quantum effects	en
dc.subject.other	MOSFET devices	en
dc.title	Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model	en
heal.type	journalArticle	en
heal.identifier.primary	10.1109/TED.2003.809040	en
heal.identifier.secondary	http://dx.doi.org/10.1109/TED.2003.809040	en
heal.language	English	en
heal.publicationDate	2003	en
heal.abstract	This paper presents a simple, physics-based, and continuous model for the quantum effects and polydepletion in deep-submicrometer MOSFETs with very thin gate oxide thicknesses. This analytical design-oriented MOSFET model correctly predicts inversion and depletion charges, transcapacitances, and drain current, from weak to strong inversion and from nonsaturation to saturation. One single additional parameter is used for polysilicon doping concentration, while the quantum correction does not introduce any new parameter. Comparison to experimental data of deep-submicrometer technologies is provided, showing accurate fits both for I-V and C-V data. The model offers simple relationships among effective electrical parameters and physical device parameters, providing insight into the physical phenomena. This new model thereby supports device engineering, analog circuit design practice, as well as efficient circuit simulation.	en
heal.publisher	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC	en
heal.journalName	IEEE Transactions on Electron Devices	en
dc.identifier.doi	10.1109/TED.2003.809040	en
dc.identifier.isi	ISI:000182496000021	en
dc.identifier.volume	50	en
dc.identifier.issue	2	en
dc.identifier.spage	406	en
dc.identifier.epage	417	en