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Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model

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Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model

Lallement, C; Sallese, J-M; Bucher, M; Grabinski, W; Fazan, PC
URI: https://dspace.lib.ntua.gr/xmlui/handle/123456789/15100
Date: 2003

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