Investigation of deep implanted fluorine channeling profiles in silicon using resonant NRA

Kokkoris, M; Perdikakis, G; Vlastou, R; Papadopoulos, CT; Aslanoglou, XA; Posselt, M; Grotzschel, R; Harissopulos, S; Kossionides, S

dc.contributor.author	Kokkoris, M	en
dc.contributor.author	Perdikakis, G	en
dc.contributor.author	Vlastou, R	en
dc.contributor.author	Papadopoulos, CT	en
dc.contributor.author	Aslanoglou, XA	en
dc.contributor.author	Posselt, M	en
dc.contributor.author	Grotzschel, R	en
dc.contributor.author	Harissopulos, S	en
dc.contributor.author	Kossionides, S	en
dc.date.accessioned	2014-03-01T01:19:04Z
dc.date.available	2014-03-01T01:19:04Z
dc.date.issued	2003	en
dc.identifier.issn	0168-583X	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/15365
dc.subject	C-TRIM	en
dc.subject	Channeling	en
dc.subject	Fluorine profiling	en
dc.subject	High-energy implantation	en
dc.subject	Nuclear resonance	en
dc.subject	Resonant NRA	en
dc.subject.classification	Instruments & Instrumentation	en
dc.subject.classification	Nuclear Science & Technology	en
dc.subject.classification	Physics, Atomic, Molecular & Chemical	en
dc.subject.classification	Physics, Nuclear	en
dc.subject.other	Fluorine	en
dc.subject.other	Ion implantation	en
dc.subject.other	Irradiation	en
dc.subject.other	Nuclear reactors	en
dc.subject.other	Silicon	en
dc.subject.other	High-energy implantation	en
dc.subject.other	Crystals	en
dc.title	Investigation of deep implanted fluorine channeling profiles in silicon using resonant NRA	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0168-583X(03)00448-8	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0168-583X(03)00448-8	en
heal.language	English	en
heal.publicationDate	2003	en
heal.abstract	Si(100) and (111) crystals were irradiated in the random as well as in the channeling direction, using 5 MeV F-19(+) ions, to a maximum fluence of approximately 1 x 10(17) particles/cm(2). The occurring deep implanted profiles were subsequently investigated using the Resonant Nuclear Reaction Analysis technique in the energy range E-p = 950-1200 keV. The reaction F-19(p, alphay)O-16 reaction exhibits a strong resonant behavior in the above mentioned energy range, thus providing an excellent tool for the depth profiling of fluorine, yielding minimum detection limits of the order of a few ppm. The occurring profiles are analyzed with SRIM and c-TRIM codes and an attempt is made to explain the characteristics of the experimental spectra, as well as to compare with results already existing in literature. (C) 2003 Elsevier Science B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms	en
dc.identifier.doi	10.1016/S0168-583X(03)00448-8	en
dc.identifier.isi	ISI:000182039000011	en
dc.identifier.volume	201	en
dc.identifier.issue	4	en
dc.identifier.spage	623	en
dc.identifier.epage	629	en