Properties of polycrystalline silicon films obtained by rapid thermal processing for micromechanical sensors

Girginoudi, D; Mitsinakis, A; Kotsani, M; Georgoulas, N; Thanailakis, A; Kontos, AG; Stergiou, VC; Raptis, YS

dc.contributor.author	Girginoudi, D	en
dc.contributor.author	Mitsinakis, A	en
dc.contributor.author	Kotsani, M	en
dc.contributor.author	Georgoulas, N	en
dc.contributor.author	Thanailakis, A	en
dc.contributor.author	Kontos, AG	en
dc.contributor.author	Stergiou, VC	en
dc.contributor.author	Raptis, YS	en
dc.date.accessioned	2014-03-01T01:21:16Z
dc.date.available	2014-03-01T01:21:16Z
dc.date.issued	2004	en
dc.identifier.issn	0022-3093	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/16169
dc.subject	Electric Conductivity	en
dc.subject	Microstructures	en
dc.subject	Phosphorus	en
dc.subject	Polycrystalline Silicon	en
dc.subject	Raman Spectroscopy	en
dc.subject	Rapid Thermal Anneal	en
dc.subject	Structural Properties	en
dc.subject	Thermal Treatment	en
dc.subject	Transmission Electron Microscopy	en
dc.subject	Low Pressure Chemical Vapor Deposited	en
dc.subject	Rapid Thermal Processing	en
dc.subject.classification	Materials Science, Ceramics	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.other	Annealing	en
dc.subject.other	Chemical sensors	en
dc.subject.other	Chemical vapor deposition	en
dc.subject.other	Compressive stress	en
dc.subject.other	Diffusion	en
dc.subject.other	Ion implantation	en
dc.subject.other	Microelectronics	en
dc.subject.other	Micromachining	en
dc.subject.other	Microstructure	en
dc.subject.other	Polycrystalline materials	en
dc.subject.other	Silicon wafers	en
dc.subject.other	Strain	en
dc.subject.other	Tensile stress	en
dc.subject.other	Transmission electron microscopy	en
dc.subject.other	Deposition rates	en
dc.subject.other	Grain defects	en
dc.subject.other	Mean free paths	en
dc.subject.other	Raman shift	en
dc.subject.other	Metallic films	en
dc.title	Properties of polycrystalline silicon films obtained by rapid thermal processing for micromechanical sensors	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.jnoncrysol.2004.07.007	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.jnoncrysol.2004.07.007	en
heal.language	English	en
heal.publicationDate	2004	en
heal.abstract	The mechanical and structural properties of as-deposited polycrystalline Si films, grown by rapid thermal processing low-pressure chemical vapor deposition at a high deposition rate of 0.4 mum/min on oxidized Si wafer substrates, were investigated using Raman spectroscopy and transmission electron microscopy (TEM) measurements. The effect of high phosphorus doping using a spin-on technique has also been studied for applications in electrically conducting microstructures. The thermal treatment of the samples, with rapid thermal annealing at 1000 and 1050 degreesC, as well as with furnace annealing at 1000 degreesC, results in a reduction of the intra-grain defects in the films. Furthermore, spin-on-coated phosphorus was easily incorporated in the films resulting in an effective electrical activation. All films have shown an overall marginal compressive stress of about 20 MPa; however, the SiO2, in pad form, beneath the SOI structures, introduces a small (about 10 MPa) tensile stress. Finally, cantilever and doubly supported beams, of useful length with a deflection, out of the horizontal plane, of less than 0.1 mum, were fabricated using rapid thermal processing compatible with the standard silicon microelectronics technologies. (C) 2004 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Journal of Non-Crystalline Solids	en
dc.identifier.doi	10.1016/j.jnoncrysol.2004.07.007	en
dc.identifier.isi	ISI:000224627800008	en
dc.identifier.volume	343	en
dc.identifier.issue	1-3	en
dc.identifier.spage	54	en
dc.identifier.epage	60	en