Integrated framework for the flux calculation of neutral species inside trenches and holes during plasma etching

Kokkoris, G; Boudouvis, AG; Gogolides, E

dc.contributor.author	Kokkoris, G	en
dc.contributor.author	Boudouvis, AG	en
dc.contributor.author	Gogolides, E	en
dc.date.accessioned	2014-03-01T01:24:31Z
dc.date.available	2014-03-01T01:24:31Z
dc.date.issued	2006	en
dc.identifier.issn	0734-2101	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/17305
dc.subject	Plasma Etching	en
dc.subject.classification	Materials Science, Coatings & Films	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Algorithms	en
dc.subject.other	Integral equations	en
dc.subject.other	Ions	en
dc.subject.other	Nonlinear equations	en
dc.subject.other	Plasma etching	en
dc.subject.other	Problem solving	en
dc.subject.other	Reactive ion etching	en
dc.subject.other	Silica	en
dc.subject.other	Cylindrical symmetry	en
dc.subject.other	Flux calculation	en
dc.subject.other	Gas chopping	en
dc.subject.other	Integrated frameworks	en
dc.subject.other	Neutral species	en
dc.subject.other	Fluxes	en
dc.title	Integrated framework for the flux calculation of neutral species inside trenches and holes during plasma etching	en
heal.type	journalArticle	en
heal.identifier.primary	10.1116/1.2345643	en
heal.identifier.secondary	http://dx.doi.org/10.1116/1.2345643	en
heal.identifier.secondary	006606JVA	en
heal.language	English	en
heal.publicationDate	2006	en
heal.abstract	An integrated framework for the neutral flux calculation inside trenches and holes during plasma etching is described, and a comparison between the two types of structure in a number. of applications is presented. First, a detailed and functional set of equations for the neutral and ion flux calculations inside long trenches and holes with cylindrical symmetry is explicitly formulated. This set is based on early works [T. S. Cale and G. B. Raupp, J. Vac. Sci. Technol. B 8, 1242 (1990); V. K. Singh et al., J. Vac. Sci. Technol. B 10, 1091 (1992)], and includes new equations for the case of holes with cylindrical symmetry. Second, a method for the solution of the respective numerical task, i.e., one or a set of linear of nonlinear integral equations, is described. This method includes a coupling algorithm with a surface chemistry model. and resolves the singularity problem of the integral equations. Third, the fluxes inside trenches and holes are compared. The flux from reemission is the major portion of the local flux at the bottom of both types of structure. The framework is applied, in SiO2 etching by fluorocarbon plasmas to predict the increased intensity of reactive ion etching lag in SiO2 holes compared to trenches. It is also applied in deep Si etching: By calculating the flux of F atoms at the bottom of very high aspect ratio (up to 150) Si trenches and holes during the gas chopping process, the aspect ratio at which the flux of F atoms is eliminated and etching practically stops is estimated. (c) 2006 American Vacuum Society.	en
heal.publisher	A V S AMER INST PHYSICS	en
heal.journalName	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films	en
dc.identifier.doi	10.1116/1.2345643	en
dc.identifier.isi	ISI:000242484900007	en
dc.identifier.volume	24	en
dc.identifier.issue	6	en
dc.identifier.spage	2008	en
dc.identifier.epage	2020	en