Laser annealing of plasma implanted boron for ultra-shallow junctions in Silicon

Florakis, A; Tsoukalas, D; Zergioti, I; Giannakopoulos, K; Dimitrakis, P; Papazoglou, DG; Bennassayag, G; Bourdon, H; Halimaoui, A

dc.contributor.author	Florakis, A	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Zergioti, I	en
dc.contributor.author	Giannakopoulos, K	en
dc.contributor.author	Dimitrakis, P	en
dc.contributor.author	Papazoglou, DG	en
dc.contributor.author	Bennassayag, G	en
dc.contributor.author	Bourdon, H	en
dc.contributor.author	Halimaoui, A	en
dc.date.accessioned	2014-03-01T01:24:34Z
dc.date.available	2014-03-01T01:24:34Z
dc.date.issued	2006	en
dc.identifier.issn	0168-583X	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/17330
dc.subject	Excimer laser annealing	en
dc.subject	PLAD	en
dc.subject	Shallow junctions	en
dc.subject	Sheet resistance	en
dc.subject.classification	Instruments & Instrumentation	en
dc.subject.classification	Nuclear Science & Technology	en
dc.subject.classification	Physics, Atomic, Molecular & Chemical	en
dc.subject.classification	Physics, Nuclear	en
dc.subject.other	Annealing	en
dc.subject.other	Excimer lasers	en
dc.subject.other	Ion implantation	en
dc.subject.other	Laser applications	en
dc.subject.other	Mathematical models	en
dc.subject.other	Monte Carlo methods	en
dc.subject.other	Plasmas	en
dc.subject.other	Secondary ion mass spectrometry	en
dc.subject.other	Semiconductor junctions	en
dc.subject.other	Transmission electron microscopy	en
dc.subject.other	Excimer laser annealing	en
dc.subject.other	PLAD	en
dc.subject.other	Shallow junctions	en
dc.subject.other	Sheet resistance	en
dc.subject.other	Boron	en
dc.title	Laser annealing of plasma implanted boron for ultra-shallow junctions in Silicon	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.nimb.2006.10.006	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.nimb.2006.10.006	en
heal.language	English	en
heal.publicationDate	2006	en
heal.abstract	This work combines plasma doping implantation (PLAD) with laser annealing using excimer laser, for the formation of ultra-shallow junctions. For that purpose, high dose BF3 was implanted in n-type silicon wafers using PLAD. The as implanted material was investigated by high resolution TEM, measured by SIMS and simulated by Monte-Carlo codes. Subsequently, the samples were annealed using a KrF laser source at 248 nm with a pulse duration 20 ns and different fluence values. Laser annealing completely recrystallizes the amorphous layer as monitored by TEM measurements, fully activates the dopants achieving low sheet resistance values as shown by Van der Pauw measurements and results in box-shaped dopant profiles with movement less than 10 nm at the junction depth as measured using SIMS. (c) 2006 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms	en
dc.identifier.doi	10.1016/j.nimb.2006.10.006	en
dc.identifier.isi	ISI:000243178600004	en
dc.identifier.volume	253	en
dc.identifier.issue	1-2	en
dc.identifier.spage	13	en
dc.identifier.epage	17	en