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Optimization of anisotropically etched silicon surface-relief gratings for substrate-mode optical interconnects

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dc.contributor.author Wu, S-D en
dc.contributor.author Gaylord, TK en
dc.contributor.author Maikisch, JS en
dc.contributor.author Glytsis, EN en
dc.date.accessioned 2014-03-01T01:24:49Z
dc.date.available 2014-03-01T01:24:49Z
dc.date.issued 2006 en
dc.identifier.issn 0003-6935 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/17448
dc.subject.classification Optics en
dc.subject.other Incident angles en
dc.subject.other Random linear (RL) polarizations en
dc.subject.other Silicon surface-relief gratings en
dc.subject.other Slant angles en
dc.subject.other Algorithms en
dc.subject.other Annealing en
dc.subject.other Etching en
dc.subject.other Light polarization en
dc.subject.other Optical interconnects en
dc.subject.other Optimization en
dc.subject.other Silicon en
dc.subject.other Diffraction gratings en
dc.title Optimization of anisotropically etched silicon surface-relief gratings for substrate-mode optical interconnects en
heal.type journalArticle en
heal.identifier.primary 10.1364/AO.45.000015 en
heal.identifier.secondary http://dx.doi.org/10.1364/AO.45.000015 en
heal.language English en
heal.publicationDate 2006 en
heal.abstract The optimum profiles of right-angle-face anisotropically etched silicon surface-relief gratings illuminated at normal incidence for substrate-mode optical interconnects are determined for TE, TM, and random linear (RL) polarizations. A simulated annealing algorithm in conjunction with the rigorous coupled-wave analysis is used. The optimum diffraction efficiencies of the -1 forward-diffracted order are 37.3%, 67.1%, and 51.2% for TE-, TM-, and RL-polarization-optimized profiles, respectively. Also, the sensitivities to grating thickness, slant angle, and incident angle of the optimized profiles are presented. (c) 2006 Optical Society of America. en
heal.publisher OPTICAL SOC AMER en
heal.journalName Applied Optics en
dc.identifier.doi 10.1364/AO.45.000015 en
dc.identifier.isi ISI:000234553600002 en
dc.identifier.volume 45 en
dc.identifier.issue 1 en
dc.identifier.spage 15 en
dc.identifier.epage 21 en


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