Pattern matching, simulation, and metrology of complex layouts fabricated by electron beam lithography

Tsikrikas, N; Drygiannakis, D; Patsis, GP; Raptis, I; Gerardino, A; Stavroulakis, S; Voyiatzis, E

dc.contributor.author	Tsikrikas, N	en
dc.contributor.author	Drygiannakis, D	en
dc.contributor.author	Patsis, GP	en
dc.contributor.author	Raptis, I	en
dc.contributor.author	Gerardino, A	en
dc.contributor.author	Stavroulakis, S	en
dc.contributor.author	Voyiatzis, E	en
dc.date.accessioned	2014-03-01T01:26:54Z
dc.date.available	2014-03-01T01:26:54Z
dc.date.issued	2007	en
dc.identifier.issn	1071-1023	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/18269
dc.subject	Electron Beam Lithography	en
dc.subject	Pattern Matching	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Nanoscience & Nanotechnology	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Computer simulation	en
dc.subject.other	Computer software	en
dc.subject.other	Electron beam lithography	en
dc.subject.other	Microprocessor chips	en
dc.subject.other	Random processes	en
dc.subject.other	Chip layouts	en
dc.subject.other	Complex layouts	en
dc.subject.other	Stochastic simulations	en
dc.subject.other	Pattern matching	en
dc.title	Pattern matching, simulation, and metrology of complex layouts fabricated by electron beam lithography	en
heal.type	journalArticle	en
heal.identifier.primary	10.1116/1.2798714	en
heal.identifier.secondary	http://dx.doi.org/10.1116/1.2798714	en
heal.language	English	en
heal.publicationDate	2007	en
heal.abstract	Validation of design rules taking into account fine details such as line-edge roughness, and full chip layout simulation for design inconsistencies, before actual fabrication, are among the main objectives of current software assisted metrology tools. Line-edge roughness quantification should accompany critical dimension (CD) measurements since it could be a large fraction of the total CD budget. A detailed simulation and metrology approach of line-edge roughness quantification versus the length scales in a layout are presented in this work using a combination of electron beam simulation for the exposure part, and stochastic simulations for the modeling of resist film, postexposure bake, and resist dissolution. The method is applied also on a test layout with critical dimension of 200 nm and the resulted simulation and scanning electron microscopy images are compared with the aid of a pattern matching algorithm which enables the identification of the desired layout for metrology on a complex layout containing many printed features. (c) 2007 American Vacuum Society.	en
heal.publisher	A V S AMER INST PHYSICS	en
heal.journalName	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures	en
dc.identifier.doi	10.1116/1.2798714	en
dc.identifier.isi	ISI:000251611900107	en
dc.identifier.volume	25	en
dc.identifier.issue	6	en
dc.identifier.spage	2307	en
dc.identifier.epage	2311	en