Stochastic simulation of material and process effects on the patterning of complex layouts

Tsikrikas, N; Drygiannakis, D; Patsis, GP; Raptis, I; Stavroulakis, S; Voyiatzis, E

dc.contributor.author	Tsikrikas, N	en
dc.contributor.author	Drygiannakis, D	en
dc.contributor.author	Patsis, GP	en
dc.contributor.author	Raptis, I	en
dc.contributor.author	Stavroulakis, S	en
dc.contributor.author	Voyiatzis, E	en
dc.date.accessioned	2014-03-01T01:27:18Z
dc.date.available	2014-03-01T01:27:18Z
dc.date.issued	2007	en
dc.identifier.issn	0021-4922	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/18386
dc.subject	DFM	en
dc.subject	Electron-beam simulation	en
dc.subject	Layout simulation	en
dc.subject	Line-width roughness	en
dc.subject	Resist dissolution	en
dc.subject	Stochastic simulation	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Computer simulation	en
dc.subject.other	Convolution	en
dc.subject.other	Dissolution	en
dc.subject.other	Electron beams	en
dc.subject.other	Parameter estimation	en
dc.subject.other	Random processes	en
dc.subject.other	Surface roughness	en
dc.subject.other	Electron-beam simulation	en
dc.subject.other	Layout simulation	en
dc.subject.other	Line-width roughness	en
dc.subject.other	Resist dissolution	en
dc.subject.other	Stochastic simulation	en
dc.subject.other	Pattern recognition	en
dc.title	Stochastic simulation of material and process effects on the patterning of complex layouts	en
heal.type	journalArticle	en
heal.identifier.primary	10.1143/JJAP.46.6191	en
heal.identifier.secondary	http://dx.doi.org/10.1143/JJAP.46.6191	en
heal.language	English	en
heal.publicationDate	2007	en
heal.abstract	The whole process of stochastic lithography simulation combined with an electron-beam exposure pattern convolution module, could be useful in the validation of design rules taking into account fine details such as line-edge roughness, and for simulating the layout before actual fabrication for design inconsistencies. Material and processing effects would result in even greater feature degradation if not properly controlled. Therefore, material and process parameter can no more be considered of second order importance in proximity effect quantification. Line-width roughness quantification should accompany critical dimension (CD) measurements since it is shown that it could be a large fraction of the total CD in the sub-100 nm length scales. The effects of exposure, material and processes on layouts are presented in this work using a combination of electron beam simulation for the exposure part, and stochastic simulations for the modeling of resist film, and the post-exposure bake and resist dissolution. Particular examples of line-width roughness and critical dimension non-uniformity due to proximity, material, and process effects on complex layouts will be investigated. © 2007 The Japan Society of Applied Physics.	en
heal.publisher	INST PURE APPLIED PHYSICS	en
heal.journalName	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers	en
dc.identifier.doi	10.1143/JJAP.46.6191	en
dc.identifier.isi	ISI:000250066700017	en
dc.identifier.volume	46	en
dc.identifier.issue	9 B	en
dc.identifier.spage	6191	en
dc.identifier.epage	6197	en