Stochastic simulation studies of molecular resists for the 32 nm technology node

Drygiannakis, D; Patsis, GP; Tsikrikas, N; Kokkoris, G; Boudouvis, A; Raptis, I; Gogolides, E; Argitis, P

dc.contributor.author	Drygiannakis, D	en
dc.contributor.author	Patsis, GP	en
dc.contributor.author	Tsikrikas, N	en
dc.contributor.author	Kokkoris, G	en
dc.contributor.author	Boudouvis, A	en
dc.contributor.author	Raptis, I	en
dc.contributor.author	Gogolides, E	en
dc.contributor.author	Argitis, P	en
dc.date.accessioned	2014-03-01T01:29:14Z
dc.date.available	2014-03-01T01:29:14Z
dc.date.issued	2008	en
dc.identifier.issn	0167-9317	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/19174
dc.subject	Etching	en
dc.subject	High resolution lithography	en
dc.subject	LER	en
dc.subject	LWR	en
dc.subject	Molecular resists	en
dc.subject	Process simulation	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Nanoscience & Nanotechnology	en
dc.subject.classification	Optics	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Algorithms	en
dc.subject.other	Computer simulation	en
dc.subject.other	Lithography	en
dc.subject.other	Molecular weight	en
dc.subject.other	Semiconductor device manufacture	en
dc.subject.other	Stochastic models	en
dc.subject.other	Surface roughness	en
dc.subject.other	High resolution lithography	en
dc.subject.other	Low line-edge roughness (LER)	en
dc.subject.other	Molecular resists	en
dc.subject.other	Process simulation	en
dc.subject.other	Photoresists	en
dc.title	Stochastic simulation studies of molecular resists for the 32 nm technology node	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.mee.2007.12.072	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.mee.2007.12.072	en
heal.language	English	en
heal.publicationDate	2008	en
heal.abstract	Experiments and simulations suggest that low-molecular-weight resist materials could result in low line-edge roughness (LER) which is a critical parameter for the forthcoming technology nodes. Two positive molecular resist architectures are modeled with a stochastic lithography simulator and their LER behavior is quantified. The corresponding LER values obtained are less than 1 nm, suggesting that such materials are promising for the fabrication of devices even down to the 32 nm node. Two-dimensional lattices with the molecular resist architectures are created and combined with the stochastic lithography simulator and a simple etching modeling algorithm, in order to test the transferred line-width roughness (LWR) on the gate region of the pMOS and nMOS transistors of an inverter cell designed with 40 nm nominal gate length. The role of the molecular resist architecture on the final LWR of transistor gate is discussed. (C) 2008 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/j.mee.2007.12.072	en
dc.identifier.isi	ISI:000257413400053	en
dc.identifier.volume	85	en
dc.identifier.issue	5-6	en
dc.identifier.spage	949	en
dc.identifier.epage	954	en