Advanced lithography models for strict process control in the 32 nm technology node

Patsis, GP; Drygiannakis, D; Raptis, I; Gogolides, E; Erdmann, A

dc.contributor.author	Patsis, GP	en
dc.contributor.author	Drygiannakis, D	en
dc.contributor.author	Raptis, I	en
dc.contributor.author	Gogolides, E	en
dc.contributor.author	Erdmann, A	en
dc.date.accessioned	2014-03-01T01:29:48Z
dc.date.available	2014-03-01T01:29:48Z
dc.date.issued	2009	en
dc.identifier.issn	0167-9317	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/19348
dc.subject	High resolution lithography	en
dc.subject	LER	en
dc.subject	Mesoscale simulation	en
dc.subject	Molecular resists	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Nanoscience & Nanotechnology	en
dc.subject.classification	Optics	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	193nm immersion lithographies	en
dc.subject.other	3-d models	en
dc.subject.other	32 nm technologies	en
dc.subject.other	Advanced lithographies	en
dc.subject.other	Degree of polymerizations	en
dc.subject.other	Diffraction limiteds	en
dc.subject.other	High resolution lithography	en
dc.subject.other	LER	en
dc.subject.other	Mesoscale simulation	en
dc.subject.other	Mesoscopic	en
dc.subject.other	Molecular resists	en
dc.subject.other	Photo resist processing	en
dc.subject.other	Photoresist materials	en
dc.subject.other	Simulation tools	en
dc.subject.other	Stochastic simulations	en
dc.subject.other	Photoresistors	en
dc.subject.other	Polymers	en
dc.subject.other	Surface treatment	en
dc.subject.other	Three dimensional	en
dc.subject.other	Lithography	en
dc.title	Advanced lithography models for strict process control in the 32 nm technology node	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.mee.2009.01.050	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.mee.2009.01.050	en
heal.language	English	en
heal.publicationDate	2009	en
heal.abstract	Macroscopic photoresist processing simulation tools are combined with mesoscopic stochastic simulations in order to enable quantification of the discrete composition of the photoresist material. The effect of degree of polymerization of the polymer 2D and 3D models on the CD and LWR of 32 nm lines/spaces exposed either under non-diffraction-limited conditions and with 193 nm immersion lithography simulation are studied. (C) 2009 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/j.mee.2009.01.050	en
dc.identifier.isi	ISI:000267273300016	en
dc.identifier.volume	86	en
dc.identifier.issue	4-6	en
dc.identifier.spage	513	en
dc.identifier.epage	516	en