Trapping properties of sputtered hafnium oxide films: Bulk traps vs. interface traps

Verrelli, E; Galanopoulos, G; Zouboulis, I; Tsoukalas, D

dc.contributor.author	Verrelli, E	en
dc.contributor.author	Galanopoulos, G	en
dc.contributor.author	Zouboulis, I	en
dc.contributor.author	Tsoukalas, D	en
dc.date.accessioned	2014-03-01T01:34:48Z
dc.date.available	2014-03-01T01:34:48Z
dc.date.issued	2010	en
dc.identifier.issn	0040-6090	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/20868
dc.subject	Bulk trap	en
dc.subject	Charge distribution	en
dc.subject	Charge retention	en
dc.subject	Electrical characterization	en
dc.subject	Hafnium oxide	en
dc.subject	High dielectric constant	en
dc.subject	Interface trap	en
dc.subject	Non-volatile memory	en
dc.subject	Sputtering	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Materials Science, Coatings & Films	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Bulk traps	en
dc.subject.other	Charge retention	en
dc.subject.other	Electrical characterization	en
dc.subject.other	High dielectric constants	en
dc.subject.other	Interface traps	en
dc.subject.other	Non-volatile memories	en
dc.subject.other	Charge distribution	en
dc.subject.other	Charged particles	en
dc.subject.other	Dielectric materials	en
dc.subject.other	Hafnium	en
dc.subject.other	Hafnium oxides	en
dc.subject.other	Hysteresis	en
dc.subject.other	Oxides	en
dc.subject.other	Permittivity	en
dc.subject.other	Physical vapor deposition	en
dc.subject.other	Silicon compounds	en
dc.subject.other	Size distribution	en
dc.subject.other	Oxide films	en
dc.title	Trapping properties of sputtered hafnium oxide films: Bulk traps vs. interface traps	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.tsf.2010.05.051	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.tsf.2010.05.051	en
heal.language	English	en
heal.publicationDate	2010	en
heal.abstract	The purpose of this work is to investigate the influence of the spatial distribution of traps on the electrical characteristics of hafnium oxide films deposited by physical vapor deposition. Samples were Al gated metal-oxide-semiconductor capacitors with hafnium oxide films deposited on SiO2 layer thermally grown on Si. During capacitance-voltage measurements large hysteresis, up to 10 V. are observed in all samples. It is shown that depending on the hafnium oxide deposition conditions, the spatial distribution of the traps responsible for the hysteresis can be either two dimensional (interface/border traps) or three dimensional (bulk traps). (C) 2010 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE SA	en
heal.journalName	Thin Solid Films	en
dc.identifier.doi	10.1016/j.tsf.2010.05.051	en
dc.identifier.isi	ISI:000279885700042	en
dc.identifier.volume	518	en
dc.identifier.issue	19	en
dc.identifier.spage	5579	en
dc.identifier.epage	5584	en