Trapping properties of sputtered hafnium oxide films: Bulk traps vs. interface traps

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dc.contributor.author Verrelli, E en
dc.contributor.author Galanopoulos, G en
dc.contributor.author Zouboulis, I en
dc.contributor.author Tsoukalas, D en
dc.date.accessioned 2014-03-01T01:34:48Z
dc.date.available 2014-03-01T01:34:48Z
dc.date.issued 2010 en
dc.identifier.issn 0040-6090 en
dc.identifier.uri http://hdl.handle.net/123456789/20868
dc.subject Bulk trap en
dc.subject Charge distribution en
dc.subject Charge retention en
dc.subject Electrical characterization en
dc.subject Hafnium oxide en
dc.subject High dielectric constant en
dc.subject Interface trap en
dc.subject Non-volatile memory en
dc.subject Sputtering en
dc.subject.classification Materials Science, Multidisciplinary en
dc.subject.classification Materials Science, Coatings & Films en
dc.subject.classification Physics, Applied en
dc.subject.classification Physics, Condensed Matter en
dc.subject.other Bulk traps en
dc.subject.other Charge retention en
dc.subject.other Electrical characterization en
dc.subject.other High dielectric constants en
dc.subject.other Interface traps en
dc.subject.other Non-volatile memories en
dc.subject.other Charge distribution en
dc.subject.other Charged particles en
dc.subject.other Dielectric materials en
dc.subject.other Hafnium en
dc.subject.other Hafnium oxides en
dc.subject.other Hysteresis en
dc.subject.other Oxides en
dc.subject.other Permittivity en
dc.subject.other Physical vapor deposition en
dc.subject.other Silicon compounds en
dc.subject.other Size distribution en
dc.subject.other Oxide films en
dc.title Trapping properties of sputtered hafnium oxide films: Bulk traps vs. interface traps en
heal.type journalArticle en
heal.identifier.primary 10.1016/j.tsf.2010.05.051 en
heal.identifier.secondary http://dx.doi.org/10.1016/j.tsf.2010.05.051 en
heal.language English en
heal.publicationDate 2010 en
heal.abstract The purpose of this work is to investigate the influence of the spatial distribution of traps on the electrical characteristics of hafnium oxide films deposited by physical vapor deposition. Samples were Al gated metal-oxide-semiconductor capacitors with hafnium oxide films deposited on SiO2 layer thermally grown on Si. During capacitance-voltage measurements large hysteresis, up to 10 V. are observed in all samples. It is shown that depending on the hafnium oxide deposition conditions, the spatial distribution of the traps responsible for the hysteresis can be either two dimensional (interface/border traps) or three dimensional (bulk traps). (C) 2010 Elsevier B.V. All rights reserved. en
heal.publisher ELSEVIER SCIENCE SA en
heal.journalName Thin Solid Films en
dc.identifier.doi 10.1016/j.tsf.2010.05.051 en
dc.identifier.isi ISI:000279885700042 en
dc.identifier.volume 518 en
dc.identifier.issue 19 en
dc.identifier.spage 5579 en
dc.identifier.epage 5584 en

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