The applicability of logarithmic extreme value distributions in electomigration induced failures of Al/Cu thin-film interconnects

Loupis, MI

dc.contributor.author	Loupis, MI	en
dc.date.accessioned	2014-03-01T01:43:45Z
dc.date.available	2014-03-01T01:43:45Z
dc.date.issued	1995	en
dc.identifier.issn	00262714	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/24196
dc.subject.other	Electric conductors	en
dc.subject.other	Failure analysis	en
dc.subject.other	Mathematical models	en
dc.subject.other	Semiconducting aluminum compounds	en
dc.subject.other	Statistical methods	en
dc.subject.other	Thin films	en
dc.subject.other	Bilayer interconnects	en
dc.subject.other	Electromigration failure	en
dc.subject.other	Logarithmic extreme value distributions	en
dc.subject.other	Post processing	en
dc.subject.other	Electromigration	en
dc.title	The applicability of logarithmic extreme value distributions in electomigration induced failures of Al/Cu thin-film interconnects	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/0026-2714(95)93079-P	en
heal.identifier.secondary	http://dx.doi.org/10.1016/0026-2714(95)93079-P	en
heal.publicationDate	1995	en
heal.abstract	In electromigration failure studies it is in general assumed that electromigration induced failures may be adequately modelled by a log normal distribution. Further to this it has been argued that a log normal distribution of failure times is indicative of electromigration mechanisms. We have combined post processing of existing life-data from Al/Cu+TiW bilayer interconnects with our own results from Al/Cu interconnects to show that the Log Extreme Value distribution is an equally good statistical model for electromigration failures, even in cases where grain size exceeds the line width. The significance of such a modelling is particularly apparent in electromigration failure rate prediction.	en
heal.journalName	Microelectronics Reliability	en
dc.identifier.doi	10.1016/0026-2714(95)93079-P	en
dc.identifier.volume	35	en
dc.identifier.issue	3	en
dc.identifier.spage	611	en
dc.identifier.epage	617	en