Silicon nanocrystal formation in thin thermal-oxide films by very-low energy Si + ion implantation

Normand, P; Tsoukalas, D; Kapetanakis, E; Berg, J; Armour, D; Stoemenos, J

dc.contributor.author	Normand, P	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Kapetanakis, E	en
dc.contributor.author	Berg, J	en
dc.contributor.author	Armour, D	en
dc.contributor.author	Stoemenos, J	en
dc.date.accessioned	2014-03-01T01:45:47Z
dc.date.available	2014-03-01T01:45:47Z
dc.date.issued	1997	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/24727
dc.subject	Electrical Properties	en
dc.subject	High Temperature	en
dc.subject	Ion Implantation	en
dc.subject	Low Energy	en
dc.subject	Silicon Oxide	en
dc.subject	Transmission Electron Microscopy	en
dc.subject	High Dose	en
dc.subject	Metal Oxide Semiconductor	en
dc.title	Silicon nanocrystal formation in thin thermal-oxide films by very-low energy Si + ion implantation	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0167-9317(97)00019-1	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0167-9317(97)00019-1	en
heal.publicationDate	1997	en
heal.abstract	Thin thermally grown silicon oxides are implanted with a high dose of silicon using very low energy ion implantation. After high temperature annealing, the oxides are observed by Transmission Electron Microscopy which reveals the existence of silicon nano-crystals. The electrical properties of metal-oxide-semiconductor devices are then investigated using dynamic conductance as well as dc current measurements.	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/S0167-9317(97)00019-1	en