Fabrication of Si nano-wires using anisotropic dry and wet etching

Normand, P; Tsoukalas, D; Aidinis, C; Tserepi, A; Kouvatsos, D; Kapetanakis, E

dc.contributor.author	Normand, P	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Aidinis, C	en
dc.contributor.author	Tserepi, A	en
dc.contributor.author	Kouvatsos, D	en
dc.contributor.author	Kapetanakis, E	en
dc.date.accessioned	2014-03-01T01:46:42Z
dc.date.available	2014-03-01T01:46:42Z
dc.date.issued	1998	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/25014
dc.title	Fabrication of Si nano-wires using anisotropic dry and wet etching	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0167-9317(98)00129-4	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0167-9317(98)00129-4	en
heal.publicationDate	1998	en
heal.abstract	A new process for the fabrication of silicon wires on SOI material using anisotropic dry and wet etching is proposed. Arrays of silicon pads joined by narrow Si wires have been successfully fabricated. The structures are uniform and precisely controlled, thus demonstrating the reliability of the process and its suitability for nano-device applications.	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/S0167-9317(98)00129-4	en