Coarsening of End-of-Range defects in ion-implanted silicon annealed in neutral and oxidizing ambients

Giles, L; Omri, M; Mauduit, B; Claverie, A; Skarlatos, D; Tsoukalas, D; Nejim, A

dc.contributor.author	Giles, L	en
dc.contributor.author	Omri, M	en
dc.contributor.author	Mauduit, B	en
dc.contributor.author	Claverie, A	en
dc.contributor.author	Skarlatos, D	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Nejim, A	en
dc.date.accessioned	2014-03-01T01:47:49Z
dc.date.available	2014-03-01T01:47:49Z
dc.date.issued	1999	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/25349
dc.subject	Dislocations	en
dc.subject	Ion Implantation	en
dc.subject	End of Range	en
dc.subject	High Dose	en
dc.title	Coarsening of End-of-Range defects in ion-implanted silicon annealed in neutral and oxidizing ambients	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0168-583X(98)00767-8	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0168-583X(98)00767-8	en
heal.publicationDate	1999	en
heal.abstract	The evolution of End-of-Range defects during post-implantation anneals has been investigated in order to elucidate the role of the surface on the self-interstitial supersaturation near the damage region. In this work we have investigated both high dose Si+-implanted and Ge+-implanted silicon samples thermally treated under N2, N2O and O2 ambients. It has been found that independently of the implanted species	en
heal.journalName	Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms	en
dc.identifier.doi	10.1016/S0168-583X(98)00767-8	en