Structure and Memory Effects of Low Energy Ge-Implanted Thin SiO2 Films

Kapetanakis, E; Normand, P; Tsoukalas, D; Beltsios, K; Travlos, T; Gautier, J; Palun, L; Jourdan, F

dc.contributor.author	Kapetanakis, E	en
dc.contributor.author	Normand, P	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Beltsios, K	en
dc.contributor.author	Travlos, T	en
dc.contributor.author	Gautier, J	en
dc.contributor.author	Palun, L	en
dc.contributor.author	Jourdan, F	en
dc.date.accessioned	2014-03-01T01:48:21Z
dc.date.available	2014-03-01T01:48:21Z
dc.date.issued	1999	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/25462
dc.relation.uri	http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1505532	en
dc.relation.uri	http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=01505532	en
dc.subject	Low Energy	en
dc.subject	Memory Effect	en
dc.subject	Transmission Electron Microscopy	en
dc.title	Structure and Memory Effects of Low Energy Ge-Implanted Thin SiO2 Films	en
heal.type	journalArticle	en
heal.publicationDate	1999	en
heal.abstract	Thin Si02 films have been implanted with Ge+ ions and subsequently annealed. Transmission electron microscopy results indicate that after annealing at 95()oC Ge remains distributed in a band and not in separate pockets. The charge storage effects of the Ge-implanted gate oxide of MaS capacitors have been studied for accumulation conditions through J-V and C-V measurements. A high positive' voltage	en