dc.contributor.author |
Normand, P |
en |
dc.contributor.author |
Beltsios, K |
en |
dc.contributor.author |
Kapetanakis, E |
en |
dc.contributor.author |
Tsoukalas, D |
en |
dc.contributor.author |
Travlos, T |
en |
dc.contributor.author |
Stoemenos, J |
en |
dc.contributor.author |
Berg, J |
en |
dc.contributor.author |
Zhang, S |
en |
dc.contributor.author |
Vieu, C |
en |
dc.contributor.author |
Launois, H |
en |
dc.contributor.author |
Gautier, J |
en |
dc.contributor.author |
Jourdan, F |
en |
dc.contributor.author |
Palun, L |
en |
dc.date.accessioned |
2014-03-01T01:50:45Z |
|
dc.date.available |
2014-03-01T01:50:45Z |
|
dc.date.issued |
2001 |
en |
dc.identifier.uri |
https://dspace.lib.ntua.gr/xmlui/handle/123456789/26105 |
|
dc.subject |
Glass Transition |
en |
dc.subject |
Glass Transition Temperature |
en |
dc.subject |
Ion Implantation |
en |
dc.subject |
Low Energy |
en |
dc.subject |
Phase Transformation |
en |
dc.subject |
Silicon Oxide |
en |
dc.title |
Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films |
en |
heal.type |
journalArticle |
en |
heal.identifier.primary |
10.1016/S0168-583X(01)00495-5 |
en |
heal.identifier.secondary |
http://dx.doi.org/10.1016/S0168-583X(01)00495-5 |
en |
heal.publicationDate |
2001 |
en |
heal.abstract |
The structure evolution of annealed low-energy Si- or Ge-implanted thin and thick SiO2 layers is studied. The majority of Si (or Ge) species is restricted within a 3–4 nm thick layer. Si is able to separate and crystallize more easily than Ge. The glass transition temperature of the as-implanted structure has a significant effect on the progress of phase transformations |
en |
heal.journalName |
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms |
en |
dc.identifier.doi |
10.1016/S0168-583X(01)00495-5 |
en |