Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films

Normand, P; Beltsios, K; Kapetanakis, E; Tsoukalas, D; Travlos, T; Stoemenos, J; Berg, J; Zhang, S; Vieu, C; Launois, H; Gautier, J; Jourdan, F; Palun, L

dc.contributor.author	Normand, P	en
dc.contributor.author	Beltsios, K	en
dc.contributor.author	Kapetanakis, E	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Travlos, T	en
dc.contributor.author	Stoemenos, J	en
dc.contributor.author	Berg, J	en
dc.contributor.author	Zhang, S	en
dc.contributor.author	Vieu, C	en
dc.contributor.author	Launois, H	en
dc.contributor.author	Gautier, J	en
dc.contributor.author	Jourdan, F	en
dc.contributor.author	Palun, L	en
dc.date.accessioned	2014-03-01T01:50:45Z
dc.date.available	2014-03-01T01:50:45Z
dc.date.issued	2001	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/26105
dc.subject	Glass Transition	en
dc.subject	Glass Transition Temperature	en
dc.subject	Ion Implantation	en
dc.subject	Low Energy	en
dc.subject	Phase Transformation	en
dc.subject	Silicon Oxide	en
dc.title	Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0168-583X(01)00495-5	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0168-583X(01)00495-5	en
heal.publicationDate	2001	en
heal.abstract	The structure evolution of annealed low-energy Si- or Ge-implanted thin and thick SiO2 layers is studied. The majority of Si (or Ge) species is restricted within a 3–4 nm thick layer. Si is able to separate and crystallize more easily than Ge. The glass transition temperature of the as-implanted structure has a significant effect on the progress of phase transformations	en
heal.journalName	Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms	en
dc.identifier.doi	10.1016/S0168-583X(01)00495-5	en