Investigation of the influence of a dislocation loop layer on interstitial kinetics during surface oxidation of silicon

Tsoukalas, D; Skarlatos, D; Stoemenos, J

dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Skarlatos, D	en
dc.contributor.author	Stoemenos, J	en
dc.date.accessioned	2014-03-01T01:50:46Z
dc.date.available	2014-03-01T01:50:46Z
dc.date.issued	2001	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/26122
dc.subject	Dislocations	en
dc.subject	Kinetics	en
dc.subject	Point Defect	en
dc.subject	Silicon Wafer	en
dc.subject	Wafer Bonding	en
dc.title	Investigation of the influence of a dislocation loop layer on interstitial kinetics during surface oxidation of silicon	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0168-583X(00)00479-1	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0168-583X(00)00479-1	en
heal.publicationDate	2001	en
heal.abstract	In this work we investigate how the presence of a dislocation loop layer affects the surface interstitial supersaturation during thermal oxidation of silicon. To address this issue we created, using the silicon wafer bonding technique, a dislocation loop layer at different distances from the surface. The results show a linear dependence of the injection flux of interstitials with the inverse	en
heal.journalName	Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms	en
dc.identifier.doi	10.1016/S0168-583X(00)00479-1	en