Simulation of fluorocarbon plasma etching of SiO 2 structures

Kokkoris, G; Gogolides, E; Boudouvis, A

dc.contributor.author	Kokkoris, G	en
dc.contributor.author	Gogolides, E	en
dc.contributor.author	Boudouvis, A	en
dc.date.accessioned	2014-03-01T01:50:57Z
dc.date.available	2014-03-01T01:50:57Z
dc.date.issued	2001	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/26185
dc.subject	Graphical Representation	en
dc.subject	Plasma Etching	en
dc.subject	Surface Chemistry	en
dc.subject	Surface Model	en
dc.subject	Aspect Ratio	en
dc.subject	Angular Spread	en
dc.title	Simulation of fluorocarbon plasma etching of SiO 2 structures	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0167-9317(01)00549-4	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0167-9317(01)00549-4	en
heal.publicationDate	2001	en
heal.abstract	A surface model for open area etching of SiO2 is coupled with a model to calculate the local values of etching rate on each elementary surface of the structure being etched. The surface model includes the surface chemistry for ion-enhanced etching or deposition. The local etching model (essentially a local flux calculation model) includes shadowing effects of ions/neutrals and re-emission,	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/S0167-9317(01)00549-4	en