Simulation of fluorocarbon plasma etching SiO2 structures

Kokkoris, G; Gogolides, E; Boudouvis, AG

dc.contributor.author	Kokkoris, G	en
dc.contributor.author	Gogolides, E	en
dc.contributor.author	Boudouvis, AG	en
dc.date.accessioned	2014-03-01T01:51:19Z
dc.date.available	2014-03-01T01:51:19Z
dc.date.issued	2001	en
dc.identifier.issn	0167-9317	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/26261
dc.subject	SiO2 etching	en
dc.subject	plasma etching	en
dc.subject	aspect ratio dependent etching	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Nanoscience & Nanotechnology	en
dc.subject.classification	Optics	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	ASPECT RATIO	en
dc.subject.other	PROFILE EVOLUTION	en
dc.subject.other	SILICON DIOXIDE	en
dc.subject.other	SURFACE MODEL	en
dc.title	Simulation of fluorocarbon plasma etching SiO2 structures	en
heal.type	journalArticle	en
heal.language	English	en
heal.publicationDate	2001	en
heal.abstract	A surface model for open area etching of SiO2 is coupled with a model to calculate the local values of etching rate on each elementary surface of the structure being etched. The surface model includes the surface chemistry for ion-enhanced etching or deposition. The local etching model (essentially a local flux calculation model) includes shadowing effects of ions/neutrals and re-emission, while charging effects are simulated only by an increased ion angular spread. Aspect ratio dependent and independent etching as well as transition from etching to deposition are predicted and studied as a function of plasma phase composition. Variations of etching yield versus aspect ratio can be graphically depicted as paths on the two dimensional plot of equal yield contours versus the normalised fluorine and carbonaceous radicals flux. Operation regimes of the plasma allowing minimisation of aspect ratio dependent phenomena can be easily identified by such graphical representation. (C) 2001 Elsevier Science BY All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	MICROELECTRONIC ENGINEERING	en
dc.identifier.isi	ISI:000171061800081	en
dc.identifier.volume	57-8	en
dc.identifier.spage	599	en
dc.identifier.epage	605	en