A new masking method for protecting silicon surfaces during anisotropic silicon wet etching

Normand, P; Beltsios, K; Tserepi, A; Aidinis, K; Tsoukalas, D; Cardinaud, C

dc.contributor.author	Normand, P	en
dc.contributor.author	Beltsios, K	en
dc.contributor.author	Tserepi, A	en
dc.contributor.author	Aidinis, K	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Cardinaud, C	en
dc.date.accessioned	2014-03-01T01:51:26Z
dc.date.available	2014-03-01T01:51:26Z
dc.date.issued	2002	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/26291
dc.subject	Integrated Circuit	en
dc.subject	Plasma Treatment	en
dc.subject	Room Temperature	en
dc.title	A new masking method for protecting silicon surfaces during anisotropic silicon wet etching	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0167-9317(02)00510-5	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0167-9317(02)00510-5	en
heal.publicationDate	2002	en
heal.abstract	A room-temperature silicon masking approach based on the exposure of silicon to CHF3-based plasma is explored. This plasma treatment leads to ultra-thin (2–5 nm) films that consist of a fluorocarbon top layer and a sub-oxide lower layer and are appropriate for anisotropic wet etching masks. The mask resistance to anisotropic wet-etchants is studied as a function of film preparation parameters.	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/S0167-9317(02)00510-5	en