dc.contributor.author |
Assayag, G |
en |
dc.contributor.author |
Carrada, M |
en |
dc.contributor.author |
Bonafos, C |
en |
dc.contributor.author |
Chassaing, D |
en |
dc.contributor.author |
Claverie, A |
en |
dc.contributor.author |
Normand, P |
en |
dc.contributor.author |
Tsoukalas, D |
en |
dc.contributor.author |
Dimitrakis, P |
en |
dc.contributor.author |
Kapetanakis, E |
en |
dc.contributor.author |
Soncini, V |
en |
dc.contributor.author |
Fanciulli, A |
en |
dc.contributor.author |
Perego, M |
en |
dc.date.accessioned |
2014-03-01T01:51:30Z |
|
dc.date.available |
2014-03-01T01:51:30Z |
|
dc.date.issued |
2002 |
en |
dc.identifier.uri |
https://dspace.lib.ntua.gr/xmlui/handle/123456789/26330 |
|
dc.subject |
High Resolution Electron Microscopy |
en |
dc.subject |
Non Volatile Memory |
en |
dc.subject |
Partial Oxidation |
en |
dc.subject |
Retention Time |
en |
dc.subject |
Transmission Electron Microscopy |
en |
dc.title |
Depth positioning of silicon nanoparticles created by Si ULE implants in ultrathin SiO2 |
en |
heal.type |
journalArticle |
en |
heal.identifier.primary |
10.1109/IIT.2002.1258088 |
en |
heal.identifier.secondary |
http://dx.doi.org/10.1109/IIT.2002.1258088 |
en |
heal.publicationDate |
2002 |
en |
heal.abstract |
Silicon nanocrystals buried in a thin oxide can be used as charge storage elements and be integrated in standard CMOS technology to fabricate new non-volatile memory devices. In this geometry, the control of the distances between the nanocrystals layer and the two electrodes, the channel and the gate, of the MOS determines the final characteristics of the device (write-erase and |
en |
dc.identifier.doi |
10.1109/IIT.2002.1258088 |
en |