Depth positioning of silicon nanoparticles created by Si ULE implants in ultrathin SiO2

Assayag, G; Carrada, M; Bonafos, C; Chassaing, D; Claverie, A; Normand, P; Tsoukalas, D; Dimitrakis, P; Kapetanakis, E; Soncini, V; Fanciulli, A; Perego, M

dc.contributor.author	Assayag, G	en
dc.contributor.author	Carrada, M	en
dc.contributor.author	Bonafos, C	en
dc.contributor.author	Chassaing, D	en
dc.contributor.author	Claverie, A	en
dc.contributor.author	Normand, P	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Dimitrakis, P	en
dc.contributor.author	Kapetanakis, E	en
dc.contributor.author	Soncini, V	en
dc.contributor.author	Fanciulli, A	en
dc.contributor.author	Perego, M	en
dc.date.accessioned	2014-03-01T01:51:30Z
dc.date.available	2014-03-01T01:51:30Z
dc.date.issued	2002	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/26330
dc.subject	High Resolution Electron Microscopy	en
dc.subject	Non Volatile Memory	en
dc.subject	Partial Oxidation	en
dc.subject	Retention Time	en
dc.subject	Transmission Electron Microscopy	en
dc.title	Depth positioning of silicon nanoparticles created by Si ULE implants in ultrathin SiO2	en
heal.type	journalArticle	en
heal.identifier.primary	10.1109/IIT.2002.1258088	en
heal.identifier.secondary	http://dx.doi.org/10.1109/IIT.2002.1258088	en
heal.publicationDate	2002	en
heal.abstract	Silicon nanocrystals buried in a thin oxide can be used as charge storage elements and be integrated in standard CMOS technology to fabricate new non-volatile memory devices. In this geometry, the control of the distances between the nanocrystals layer and the two electrodes, the channel and the gate, of the MOS determines the final characteristics of the device (write-erase and	en
dc.identifier.doi	10.1109/IIT.2002.1258088	en