Effect of ion energy and dose on the positioning of 2D-arrays of Si nanocrystals ion beam synthesised in thin SiO 2 layers

Carrada, M; Cherkashin, N; Bonafos, C; Benassayag, G; Chassaing, D; Normand, P; Tsoukalas, D; Soncini, V; Claverie, A

dc.contributor.author	Carrada, M	en
dc.contributor.author	Cherkashin, N	en
dc.contributor.author	Bonafos, C	en
dc.contributor.author	Benassayag, G	en
dc.contributor.author	Chassaing, D	en
dc.contributor.author	Normand, P	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Soncini, V	en
dc.contributor.author	Claverie, A	en
dc.date.accessioned	2014-03-01T01:52:37Z
dc.date.available	2014-03-01T01:52:37Z
dc.date.issued	2003	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/26668
dc.subject	High Resolution Electron Microscopy	en
dc.subject	Ion Beam	en
dc.subject	Non Volatile Memory	en
dc.subject	Partial Oxidation	en
dc.subject	Transmission Electron Microscopy	en
dc.title	Effect of ion energy and dose on the positioning of 2D-arrays of Si nanocrystals ion beam synthesised in thin SiO 2 layers	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0921-5107(02)00724-9	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0921-5107(02)00724-9	en
heal.publicationDate	2003	en
heal.abstract	Silicon nanocrystals (ncs) buried in a thin oxide can be used as charge storage elements and be integrated in standard CMOS technology to fabricate new non-volatile memory devices. In this work, we report on a systematic study of the effect of varying the beam energy (0.65–2 keV) and the dose (1015–1016 cm−2) on the positioning of 2D-arrays of ncs within	en
heal.journalName	Materials Science and Engineering B-advanced Functional Solid-state Materials	en
dc.identifier.doi	10.1016/S0921-5107(02)00724-9	en