Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis

Normand, P; Kapetanakis, E; Dimitrakis, P; Skarlatos, D; Tsoukalas, D; Beltsios, K; Claverie, A; Benassayag, G; Bonafos, C; Carrada, M; Cherkashin, N; Soncini, V; Agarwal, A; Sohl, C; Ameen, M

dc.contributor.author	Normand, P	en
dc.contributor.author	Kapetanakis, E	en
dc.contributor.author	Dimitrakis, P	en
dc.contributor.author	Skarlatos, D	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Beltsios, K	en
dc.contributor.author	Claverie, A	en
dc.contributor.author	Benassayag, G	en
dc.contributor.author	Bonafos, C	en
dc.contributor.author	Carrada, M	en
dc.contributor.author	Cherkashin, N	en
dc.contributor.author	Soncini, V	en
dc.contributor.author	Agarwal, A	en
dc.contributor.author	Sohl, C	en
dc.contributor.author	Ameen, M	en
dc.date.accessioned	2014-03-01T01:52:38Z
dc.date.available	2014-03-01T01:52:38Z
dc.date.issued	2003	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/26670
dc.subject	Ion Beam	en
dc.subject	Ion Implantation	en
dc.subject	Low Energy	en
dc.subject	Low Voltage	en
dc.subject	Nonvolatile Memory	en
dc.subject	Retention Time	en
dc.subject	Thermal Treatment	en
dc.title	Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0167-9317(03)00124-2	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0167-9317(03)00124-2	en
heal.publicationDate	2003	en
heal.abstract	The structural and electrical characteristics of thin silicon dioxide layers with embedded Si nanocrystals are reported fabricated by low-energy silicon implantation and with subsequent annealing in inert and diluted oxygen. Thermal treatment in diluted oxygen increases the thickness of the control oxide, does not affect significantly the size of the nanocrystals, and improves the integrity of the oxide. As a	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/S0167-9317(03)00124-2	en