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Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis

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Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis

Normand, P; Kapetanakis, E; Dimitrakis, P; Skarlatos, D; Tsoukalas, D; Beltsios, K; Claverie, A; Benassayag, G; Bonafos, C; Carrada, M; Cherkashin, N; Soncini, V; Agarwal, A; Sohl, C; Ameen, M
URI: https://dspace.lib.ntua.gr/xmlui/handle/123456789/26670
Date: 2003

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