MOS memory structures by very-low-energy-implanted Si in thin SiO 2

Dimitrakis, P; Kapetanakis, E; Normand, P; Skarlatos, D; Tsoukalas, D; Beltsios, K; Claverie, A; Benassayag, G; Bonafos, C; Chassaing, D; Carrada, M; Soncini, V

dc.contributor.author	Dimitrakis, P	en
dc.contributor.author	Kapetanakis, E	en
dc.contributor.author	Normand, P	en
dc.contributor.author	Skarlatos, D	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Beltsios, K	en
dc.contributor.author	Claverie, A	en
dc.contributor.author	Benassayag, G	en
dc.contributor.author	Bonafos, C	en
dc.contributor.author	Chassaing, D	en
dc.contributor.author	Carrada, M	en
dc.contributor.author	Soncini, V	en
dc.date.accessioned	2014-03-01T01:52:46Z
dc.date.available	2014-03-01T01:52:46Z
dc.date.issued	2003	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/26719
dc.subject	Charge Injection	en
dc.subject	Ion Beam	en
dc.subject	Ion Implantation	en
dc.subject	Low Energy	en
dc.title	MOS memory structures by very-low-energy-implanted Si in thin SiO 2	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0921-5107(02)00688-8	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0921-5107(02)00688-8	en
heal.publicationDate	2003	en
heal.abstract	The electrical characteristics of thin silicon dioxide layers with embedded Si nanocrystals obtained by low-energy ion beam implantation and subsequent annealing have been investigated through capacitance and current–voltage measurements of MOS capacitors. The effects of the implantation energy (range: 0.65–2 keV), annealing temperature (950–1050°C) and injection oxide characteristics on charge injection and storage are reported. It is shown that the	en
heal.journalName	Materials Science and Engineering B-advanced Functional Solid-state Materials	en
dc.identifier.doi	10.1016/S0921-5107(02)00688-8	en