Influence of implantation energy on the electrical properties of ultrathin gate oxides grown on nitrogen implanted Si substrates

Kapetanakis, E; Skarlatos, D; Tsamis, C; Normand, P; Tsoukalas, D

dc.contributor.author	Kapetanakis, E	en
dc.contributor.author	Skarlatos, D	en
dc.contributor.author	Tsamis, C	en
dc.contributor.author	Normand, P	en
dc.contributor.author	Tsoukalas, D	en
dc.date.accessioned	2014-03-01T01:52:58Z
dc.date.available	2014-03-01T01:52:58Z
dc.date.issued	2003	en
dc.identifier.issn	00036951	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/26808
dc.subject.other	Capacitance measurement	en
dc.subject.other	Current density	en
dc.subject.other	Film growth	en
dc.subject.other	Ion implantation	en
dc.subject.other	Leakage currents	en
dc.subject.other	MOS capacitors	en
dc.subject.other	Oxidation	en
dc.subject.other	Thermal effects	en
dc.subject.other	Tunnel diodes	en
dc.subject.other	Ultrathin films	en
dc.subject.other	Implantation energies	en
dc.subject.other	Gates (transistor)	en
dc.title	Influence of implantation energy on the electrical properties of ultrathin gate oxides grown on nitrogen implanted Si substrates	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.1585133	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.1585133	en
heal.publicationDate	2003	en
heal.abstract	The effect of nitrogen implantation on the electrical properties of ultrathin gate oxides grown on silicon substrates was investigated. The dependence of ion implant energy on the growth quality was studied by measuring capacitance, equivalent parallel capacitance, and gate currents. The superior electrical characteristics were obtained through 3 keV nitrogen implants.	en
heal.journalName	Applied Physics Letters	en
dc.identifier.doi	10.1063/1.1585133	en
dc.identifier.volume	82	en
dc.identifier.issue	26	en
dc.identifier.spage	4764	en
dc.identifier.epage	4766	en