Atomic-Scale Mechanisms for Low-NIEL Dopant-Type Dependent Damage in Si

Beck, M; Tsetseris, L; Caussanel, M; Schrimpf, R; Fleetwood, D; Pantelides, S

dc.contributor.author	Beck, M	en
dc.contributor.author	Tsetseris, L	en
dc.contributor.author	Caussanel, M	en
dc.contributor.author	Schrimpf, R	en
dc.contributor.author	Fleetwood, D	en
dc.contributor.author	Pantelides, S	en
dc.date.accessioned	2014-03-01T01:54:51Z
dc.date.available	2014-03-01T01:54:51Z
dc.date.issued	2006	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/27507
dc.subject	Density Function Theory	en
dc.subject	Low Energy	en
dc.subject	Primary Production	en
dc.subject	Quantum Mechanical Calculation	en
dc.subject	First Order	en
dc.subject	Non Ionizing Energy Loss	en
dc.title	Atomic-Scale Mechanisms for Low-NIEL Dopant-Type Dependent Damage in Si	en
heal.type	journalArticle	en
heal.identifier.primary	10.1109/TNS.2006.885383	en
heal.identifier.secondary	http://dx.doi.org/10.1109/TNS.2006.885383	en
heal.publicationDate	2006	en
heal.abstract	While calculated non-ionizing energy loss (NIEL) generally correlates well to first order with radiation-induced displacement damage rates, it does not account for some well-known differences in damage rates for n- and p-type Si. Here we show that the magnitude of these differences, DeltaKn-p, correlates closely with the fraction of total displacement damage due to low-energy primary knock-on atom (PKA) recoils.	en
heal.journalName	IEEE Transactions on Nuclear Science	en
dc.identifier.doi	10.1109/TNS.2006.885383	en