High performance n +/p and p +/n germanium diodes at low-temperature activation annealing

Ioannou-Sougleridis, V; Galata, S; Golias, E; Speliotis, T; Dimoulas, A; Giubertoni, D; Gennaro, S; Barozzi, M

dc.contributor.author	Ioannou-Sougleridis, V	en
dc.contributor.author	Galata, S	en
dc.contributor.author	Golias, E	en
dc.contributor.author	Speliotis, T	en
dc.contributor.author	Dimoulas, A	en
dc.contributor.author	Giubertoni, D	en
dc.contributor.author	Gennaro, S	en
dc.contributor.author	Barozzi, M	en
dc.date.accessioned	2014-03-01T02:01:09Z
dc.date.available	2014-03-01T02:01:09Z
dc.date.issued	2011	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/29160
dc.subject	High Performance	en
dc.subject	Low Temperature	en
dc.subject	Phosphorus	en
dc.title	High performance n +/p and p +/n germanium diodes at low-temperature activation annealing	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.mee.2010.11.001	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.mee.2010.11.001	en
heal.publicationDate	2011	en
heal.abstract	In this work we demonstrate the fabrication and characterization of high performance junction diodes using annealing temperatures within the temperature range of 300–350°C. The low temperature dopant activation was assisted by a 50nm platinum layer which transforms into platinum germanide during annealing. The fabricated diodes exhibited high forward currents, in excess of 400A/cm2 at ∼\|0.7\|V for both p+/n and n+/p	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/j.mee.2010.11.001	en