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High performance n +/p and p +/n germanium diodes at low-temperature activation annealing

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High performance n +/p and p +/n germanium diodes at low-temperature activation annealing

Ioannou-Sougleridis, V; Galata, S; Golias, E; Speliotis, T; Dimoulas, A; Giubertoni, D; Gennaro, S; Barozzi, M
URI: https://dspace.lib.ntua.gr/xmlui/handle/123456789/29160
Date: 2011

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