Electrical parameters in highly doped strained n-Si1 - xGe x epilayers grown on Si substrates

Tsamakis, D; Sargentis, Ch; Kuznetsov, AYu; Lampakis, D

dc.contributor.author	Tsamakis, D	en
dc.contributor.author	Sargentis, Ch	en
dc.contributor.author	Kuznetsov, AYu	en
dc.contributor.author	Lampakis, D	en
dc.date.accessioned	2014-03-01T02:42:45Z
dc.date.available	2014-03-01T02:42:45Z
dc.date.issued	2004	en
dc.identifier.issn	0038-1101	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31060
dc.subject	Conduction band splitting	en
dc.subject	Hall effect	en
dc.subject	Mobility	en
dc.subject	SiGe	en
dc.subject	Strained heterostructures	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Band structure	en
dc.subject.other	Concentration (process)	en
dc.subject.other	Hall effect	en
dc.subject.other	Semiconductor doping	en
dc.subject.other	Semiconductor growth	en
dc.subject.other	Strain	en
dc.subject.other	Substrates	en
dc.subject.other	Conduction band splitting	en
dc.subject.other	Mobility	en
dc.subject.other	SiGe	en
dc.subject.other	Strained heterostructures	en
dc.subject.other	Heterojunctions	en
dc.title	Electrical parameters in highly doped strained n-Si1 - xGe x epilayers grown on Si substrates	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/j.sse.2004.05.065	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.sse.2004.05.065	en
heal.language	English	en
heal.publicationDate	2004	en
heal.abstract	Electrical resistivity and Hall coefficient measurements have been realized on strained highly doped single n-Si1-xGex epilayers grown on Si substrates in the temperature range 80-350 K. Free electron concentration and Hall mobility were determined. Conduction band parameters and high mobility results were discussed taking into account the strain induced conduction band modification. (C) 2004 Elsevier Ltd. All rights reserved.	en
heal.publisher	PERGAMON-ELSEVIER SCIENCE LTD	en
heal.journalName	Solid-State Electronics	en
dc.identifier.doi	10.1016/j.sse.2004.05.065	en
dc.identifier.isi	ISI:000223809700072	en
dc.identifier.volume	48	en
dc.identifier.issue	10-11 SPEC. ISS.	en
dc.identifier.spage	2095	en
dc.identifier.epage	2098	en