Nitrogen distribution during oxidation of low and medium energy nitrogen-implanted silicon

Skarlatos, D; Perego, M; Tsamis, C; Ferrari, S; Fanciulli, M; Tsoukalas, D

dc.contributor.author	Skarlatos, D	en
dc.contributor.author	Perego, M	en
dc.contributor.author	Tsamis, C	en
dc.contributor.author	Ferrari, S	en
dc.contributor.author	Fanciulli, M	en
dc.contributor.author	Tsoukalas, D	en
dc.date.accessioned	2014-03-01T02:42:53Z
dc.date.available	2014-03-01T02:42:53Z
dc.date.issued	2004	en
dc.identifier.issn	0168-583X	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31125
dc.subject	Nitrided oxides	en
dc.subject	Nitrogen implantation	en
dc.subject	Ultrathin oxides	en
dc.subject.classification	Instruments & Instrumentation	en
dc.subject.classification	Nuclear Science & Technology	en
dc.subject.classification	Physics, Atomic, Molecular & Chemical	en
dc.subject.classification	Physics, Nuclear	en
dc.subject.other	Ellipsometry	en
dc.subject.other	Ion implantation	en
dc.subject.other	MOS capacitors	en
dc.subject.other	Nitrogen	en
dc.subject.other	Nitrogen oxides	en
dc.subject.other	Oxidation	en
dc.subject.other	Refractive index	en
dc.subject.other	Secondary ion mass spectrometry	en
dc.subject.other	Silica	en
dc.subject.other	Thermal effects	en
dc.subject.other	Transmission electron microscopy	en
dc.subject.other	Implantation energy	en
dc.subject.other	Nitrided oxides	en
dc.subject.other	Nitrogen implantation	en
dc.subject.other	Ultrathin oxides	en
dc.subject.other	Silicon wafers	en
dc.title	Nitrogen distribution during oxidation of low and medium energy nitrogen-implanted silicon	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/j.nimb.2003.11.023	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.nimb.2003.11.023	en
heal.language	English	en
heal.publicationDate	2004	en
heal.abstract	In this work, we performed a systematic study of the influence of nitrogen implantation energy on the final nitrogen distribution and on the growth of thin and ultrathin oxides formed by oxidation of nitrogen-implanted silicon. Nitrogen was implanted in a wide range of energies (3-150 keV) and oxidations were performed for various temperatures (800-900 degreesC and times (30 min-4 h). We observe that the amount of nitrogen remaining within the oxides decreases as the implantation energy decreases and nitrogen is located closer to the silicon surface, due to more effective out-diffusion. (C) 2003 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms	en
dc.identifier.doi	10.1016/j.nimb.2003.11.023	en
dc.identifier.isi	ISI:000189222100012	en
dc.identifier.volume	216	en
dc.identifier.issue	1-4	en
dc.identifier.spage	75	en
dc.identifier.epage	79	en